HN2A01FE-GR(TE85LF Discrete Semiconductor Products |
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Allicdata Part #: | HN2A01FE-GR(TE85LFTR-ND |
Manufacturer Part#: |
HN2A01FE-GR(TE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP 50V 0.15A ES6 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 15... |
DataSheet: | HN2A01FE-GR(TE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 800MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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HN2A01FE-GR (TE85LF) Application Field and Working Principle
HN2A01FE-GR (TE85LF) is a multifunction transistor array which offers extremely powerful functions in a single chip. It is used in a variety of electronic circuits and applications, ranging from small consumer electronics to large industrial machines. It is particularly useful in amplifying signals, controlling switching time, or protecting against overcurrent and overload.
This type of transistor array can be used in numerous markets and applications, including industrial, medical, automotive, and consumer. In industrial applications, various transistors such as the HN2A01FE-GR (TE85LF) are used to amplify signals, control switching time, or protect against overcurrent and overload in industrial machines. In medical applications, it can also be used to detect and control magnetic fields created by MRI machines or other medical devices, or to protect sensitive medical equipment from voltage fluctuations.
In automotive applications, it is often used to amplify signals in vehicle electronics, such as in the control module for a car\'s power steering, the control module for airbag deployment, and so on. It can also be used to control the speed of electric motors, reduce electronic noise, and protect electronic components from electrostatic discharge (ESD). Furthermore, in consumer applications, the transistor array is used to control various digital devices, such as GPS receivers, digital cameras, and PDAs.
The HN2A01FE-GR (TE85LF) transistor array consists of six different types of transistors, each providing different functions and benefits. The 6 types of transistors are: NPN (Bipolar Junction Transistors) transistors, PNP (Bipolar Junction Transistors) transistors, Insulated Gate Bipolar Transistors (IGBTs), Silicon Controlled Rectifiers (SCRs), Thyristors, and multiplexers. These six different types of transistors are configured in a specific order to control switching time, amplify signals, reduce electrical noise, protect against overcurrent and overload, or even provide digital control.
The most common type of transistor array, the Bipolar Junction Transistor (BJT) array, consists of NPN and PNP transistors connected in a specific order. In a BJT array, NPN transistors are used to amplify and switch electrical signals, while PNP transistors are used to control the signal processing time. To control the switching time, the PNP transistors are used to create a delay in the response of the array. The signal is then amplified by the NPN transistors and then sent out to the desired destination.
The Insulated Gate Bipolar Transistors (IGBTs) and Silicon Controlled Rectifiers (SCRs) are also components of the HN2A01FE-GR (TE85LF) transistor array. IGBTs are used to control and amplify higher current and voltage signals, while SCRs are used to control lower current and voltage signals. Multiplexers are also a part of the arrays and are used to switch signals between different channels, allowing for more efficient signal transfer.
Apart from amplification and switching, the HN2A01FE-GR (TE85LF) transistor array also provides protection against overcurrent and overload. This is done by using current-limiting resistors connected in series with the transistors. When an overload or an overcurrent occurs, these resistors limit the output, thus preventing any damage to the transistor array. This feature also makes this type of transistor array suitable for a wide variety of applications.
The HN2A01FE-GR (TE85LF) transistor array is a powerful and versatile tool for numerous applications. Its wide range of functions and capabilities make it suitable for use in industrial, medical, automotive, and consumer markets alike. With its dual nature of both an amplifier and a switch, the HN2A01FE-GR (TE85LF) is an ideal choice for engineers who need an easy-to-use and reliable transistor array with ample features.
The specific data is subject to PDF, and the above content is for reference
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