HN2A01FE-Y(TE85L,F Allicdata Electronics

HN2A01FE-Y(TE85L,F Discrete Semiconductor Products

Allicdata Part #:

HN2A01FE-Y(TE85LFTR-ND

Manufacturer Part#:

HN2A01FE-Y(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP 50V 0.15A ES6
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 15...
DataSheet: HN2A01FE-Y(TE85L,F datasheetHN2A01FE-Y(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors, or BJT, are an important part of many circuit designs. BJT arrays allow multiple transistors to be connected together to form a larger, more complex circuit. One type of BJT array is the HN2A01FE-Y(TE85L,F. This type of transistor is highly versatile and can be used in a wide variety of applications. This article will discuss the different application fields and working principles of this type of transistor array.

The HN2A01FE-Y(TE85L,F can be used in a range of applications, including linear and switched devices, audio amplifiers, drivers, and power management devices. This array has a large variety of features that make it suitable for use in a wide range of applications. The most common applications for this type of transistor array are in linear and switched devices, audio amplifiers, drivers, and power management devices.

This transistor array is designed to operate in three modes: linear, switching, and transistors. In linear mode, the HN2A01FE-Y(TE85L,F amplifies the signal, while in switch mode it switches the signal on or off. In transistor mode, the array acts as an amplifier or driver. Linear mode is the most commonly used, as it provides the highest level of signal processing, while switch and transistor modes are used in more complex applications.

The working principle of this transistor array is based on the principle of charge transfer. Charge transfer occurs when electric current is applied to a transistor, creating an electric field. This electric field then causes the electrons in the transistor to move from one side to the other, creating a change in the current and voltage of the transistor. This change in current and voltage is then amplified, creating a higher voltage signal.

In order to ensure a high level of signal processing, appropriate biasing is necessary for the HN2A01FE-Y(TE85L,F. This biasing can be done through the use of base resistors, which provide a source of base current to the transistor array. This current then enters the transistor and is used to create a signal or to control the transistor’s switching action.

Another important aspect of the HN2A01FE-Y(TE85L,F is its ability to operate in a wide range of temperature ranges. This is especially useful in applications that require precise control of the temperature, such as with audio amplifiers or drivers. In order to ensure precise control, the array is designed to operate within a specific temperature range, with a maximum temperature of 105°C.

The HN2A01FE-Y(TE85L,F is a versatile array and can be used in a variety of applications, from linear and switched devices, to audio amplifiers and drivers, to power management devices. Its working principle is based on the principle of charge transfer, and it is designed to operate in three different modes: linear, switching, and transistors. Appropriate biasing is necessary for the array, and it can be used in a wide range of temperature ranges. This makes it highly suitable for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "HN2A" Included word is 4
Part Number Manufacturer Price Quantity Description
HN2A01FU-Y(TE85L,F Toshiba Semi... 0.04 $ 3000 TRANS 2PNP 50V 0.15A US6B...
HN2A01FU-GR(TE85LF Toshiba Semi... 0.0 $ 1000 TRANS 2PNP 50V 0.15A US6-...
HN2A01FE-GR(TE85LF Toshiba Semi... 0.0 $ 1000 TRANS 2PNP 50V 0.15A ES6B...
HN2A01FE-Y(TE85L,F Toshiba Semi... 0.0 $ 1000 TRANS 2PNP 50V 0.15A ES6B...
Latest Products
BC847QASX

TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...

BC847QASX Allicdata Electronics
BC847BS/ZLX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC847BS/ZLX Allicdata Electronics
BC847BS/ZLF

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC847BS/ZLF Allicdata Electronics
BC847BPN/ZLX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC847BPN/ZLX Allicdata Electronics
BC847BPN/ZLF

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC847BPN/ZLF Allicdata Electronics
ULN2003VAS16-13

IC INTEGRATED CIRCUITBipolar (BJT) Trans...

ULN2003VAS16-13 Allicdata Electronics