HN2C01FEYTE85LF Discrete Semiconductor Products |
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Allicdata Part #: | HN2C01FEYTE85LFTR-ND |
Manufacturer Part#: |
HN2C01FEYTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 50V 0.15A ES6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | HN2C01FEYTE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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HN2C01FEYTE85LF is a type of transistor known as a Bipolar Junction Transistor (BJT) array. It is designed to provide simple and practical solutions for a variety of applications. This type of transistor is typically utilized in power control and signal management operations.
The HN2C01FEYTE85LF consists of four NPN transistors, each with a collector, base, and emitter. This type of transistor can be used as an amplifier, switch, or oscillator depending on the application. For example, they can be used in a low-voltage amplifier to increase the amount of voltage applied to a device or circuit. Additionally, they can be used in a high-voltage switching application as a switch that is able to perform specific tasks such as turning on and off lights.
The working principle of the HN2C01FEYTE85LF relies on the movement of electrons.As a current is applied to the base-emitter junction, it creates a voltage difference between the base and the emitter. This voltage difference causes the electrons to flow from the emitter to the base. By applying an additional current to the collector-base junction, a current flow is created from the base to the collector. This current is then amplified by the voltage across the collector-base junction.
The HN2C01FEYTE85LF can be used in a variety of applications including power control switches, thermistors, and even light-emitting diodes (LEDs). Additionally, they can be used in applications where they are connected in series to create a higher voltage or current. This type of transistor is especially useful for high-voltage switching or signal management operations.
The HN2C01FEYTE85LF is an incredibly useful type of transistor for performing a variety of tasks. It is capable of amplifying, switching, and oscillating various electrical signals that are applied to it. Additionally, it is capable of being used in series to create higher voltages or currents. It is an invaluable component for many applications, as it is highly reliable and easy to integrate into a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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