HN2C01FU-GR(T5L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V
Power - Max:	200mW
Frequency - Transition:	80MHz
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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IntroductionTransistors, sometimes called bipolar junction transistors (BJTs), are electronic devices used to amplify or switch electronic signals and electrical power. The HN2C01FU-GR(T5L,F) is a type of BJT array. This article will discuss the application field and working principle of this device.Application fieldHN2C01FU-GR(T5L,F) is mainly used in various electronic circuit applications such as power switching, current sensing, analog signal amplification and signal buffering. It can also be used for high power, low voltage power converters, motor drives, motion control and other applications where high-performance switching is required.As the HN2C01FU-GR(T5L,F) uses a drain current sensing topology that allows for the voltage stress and power losses to be reduced significantly, it is also suitable for applications that require high efficiency power management.Working PrincipleThe HN2C01FU-GR(T5L,F) is a type of BJT array that is constructed from a series of BJTs connected internally in a parallel circuit. It operates by utilizing the current-force induced between the two parallel BJT circuits to achieve controllable current flow.When the voltage across the two BJT circuits is equal, the current flowing between the two will be equal. However, when the voltage between the two BJT circuits is unequal, the current between the two circuits will also be unequal, resulting in a difference in voltage between the two circuits. This difference in voltage is what is used to control the current flow.When the voltage across the two BJT circuits is equal, the second BJT in the array will be reverse-biased, causing it to not conduct. However, when the voltage between the two BJT circuits becomes unequal, the second BJT in the array will become forward-biased and conduct, thus allowing current to flow through the BJT array.ConclusionThe HN2C01FU-GR(T5L,F) is a type of BJT array that is mainly used for power switching, current sensing and other applications where high-performance switching is required. It works by utilizing a current-force induced between two parallel BJT circuits in order to control and switch current flow. With its low voltage stress and power-loss characteristics, the HN2C01FU-GR(T5L,F) is a great choice for a wide variety of applications.

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