HN3C51F-BL(TE85L,F Discrete Semiconductor Products |
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Allicdata Part #: | HN3C51F-BL(TE85LFTR-ND |
Manufacturer Part#: |
HN3C51F-BL(TE85L,F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 120V 0.1A SM6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1... |
DataSheet: | HN3C51F-BL(TE85L,F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 350 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The HN3C51F-BL(TE85L,F application field and working principle, is a product within the Transistors - Bipolar (BJT) - Arrays category. This is a type of transistor array which contains five NPN Darlington transistors with common emitters. This type of transistor was designed for use in applications where a high voltage, high current, and low input current are required from a single component.
The HN3C51F-BL(TE85L,F is constructed of five NPN Darlington transistors with their emitters connected in common. This type of transistor array can be used in applications such as amplifiers, instrumentation amplifiers, motor control, timer control, and so forth. The Darlington transistor is a high-voltage, high-current device, where the base current is considerably lower than the collector current. This makes it ideal for applications where low input current is required, while providing high volts and current gain.
The HN3C51F-BL (TE85L,F has a maximum operating temperature of 125°C, and a minimum operating temperature of -55°C, making it suitable for use in a wide range of applications. The device is rated for 160V at its collector terminal and 60V at its emitter terminal. This allows the device to be used in applications such as motor control, amplifiers, or other high-voltage applications. Furthermore, the device is capable of handling up to 200 mA of current.
The HN3C51F-BL (TE85L,F works on the principle of the current flow in three semiconductor layers. One layer is formed from a P-type material, one from an N-type material and the other from a substrate material. In the forward direction, electrons from the N-type material travel to the P-type material and holes from the P-type material travel to the N-type material, thus forming a flow of current. The substrate material absorbs this current, and the flow of electrons and holes causes the voltage of the output terminals to increase or decrease accordingly.
In addition to the use of this transistor array in amplifiers and instrumentation amplifiers, it can also be used in other applications such as motor control, timer control, and so forth. The device is durable, reliable and offers a wide operating temperature range, which makes it suitable for a variety of applications. As such, the HN3C51F-BL (TE85L,F is a key component for many applications and is becoming more popular for use in these applications.
The specific data is subject to PDF, and the above content is for reference
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