HN3C51F-GR(TE85L,F Discrete Semiconductor Products

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HN3C51F-GR(TE85L,F is a high performance NPN Darlington type transistor array, which is specifically designed for use in high-voltage drivers, DC motors and general switching applications. It is a monolithic integration of a two-stage Darlington emitter follower amplifier with a very high peak output current capability up to 25A. This device has a very good low-frequency response and a high power gain, making it ideal for a variety of high current applications.

The HN3C51F-GR(TE85L,F is part of a family of bipolar motor drivers that are typically used in industrial, automotive, military and Telecom applications. They have low power consumption and very low input capacitance making them suitable for high speed designs. The HN3C51F-GR(TE85L,F is designed to meet the electrical requirements of a vast array of applications, providing a wide variety of features. This state-of-the-art product offers excellent high-current current-sourcing capabilities, high speed switching capabilities, high noise immunity, high input impedance, and low power consumption.

The HN3C51F-GR(TE85L,F is a two-stage Darlington emitter follower transistor array with a very high peak output current capability up to 25A. It is essentially an amplifier that is specifically designed to drive DC motors and other inductive loads. It consists of two NPN Darlington transistors with a common emitter configuration that provides high gain and high current output capabilities. The Darlington configuration provides a very high current gain (also known as beta or hFE) that is several times larger than the hFE of a single transistor. In addition, the Darlington configuration offers high noise immunity as well as excellent input characteristics.

The HN3C51F-GR(TE85L,F is a great choice for automotive, industrial and Telecom applications. It can be used for applications such as motor drivers, instrumentation, audio amplifiers and switching applications. The device supports very high peak currents up to 25A, is voltage controlled and provides excellent stability and low noise operation. The device also has excellent temperature and power consumption characteristics, making it ideal for a variety of applications. Additionally, the device is very reliable and has been tested to endure a wide range of environmental conditions.

In conclusion, the HN3C51F-GR(TE85L,F is a high performance, two-stage Darlington emitter follower transistor array that is specifically designed for use in high-voltage drivers, DC motors and general switching applications. It has a very high peak output current capability of up to 25A and provides excellent performance, reliability and stability. The device has a very good low-frequency response, a high power gain, low power consumption and very low input capacitance, making it ideal for a variety of high-current applications.

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