HN4A06J(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Discontinued at Digi-Key
Transistor Type:	2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	SMV

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Introduction to HN4A06J (TE85L,F) Transistors

HN4A06J (TE85L,F) are a type of bipolar Junction Transistors (BJT) also known as arrays. These transistors are widely used in today’s electronics and electrical applications. They feature two pins for current entry and exit and three for voltage control. They are also extremely small and light, yet still able to deliver premium performance.

Applications of HN4A06J (TE85L,F) Transistors

The HN4A06J (TE85L,F) transistors have a wide range of applications. These transistors are often used in audio amplifiers, linear amplifier circuits, switching circuits and voltage regulator applications. In these types of applications, HN4A06J (TE85L,F) transistors provide important functions such as amplification, distortion control, stabilization, and current limiting.The transistors are also widely used in high frequency applications. This includes radio frequency amplifiers, transceivers, and microwave circuits. Additionally, HN4A06J (TE85L,F) transistors are also used in data communications systems and digital signal processors (DSPs).

Working Principle of HN4A06J (TE85L,F) Transistors

The HN4A06J (TE85L,F) transistors are bipolar Junction Transistors, meaning they are able to amplify and control current and voltage using a small amount of power. At the heart of the HN4A06J (TE85L,F) transistors is a semiconductor material, usually a combination of Silicon, Arsenic, Boron, and other elements. These materials are uniquely designed to offer high performance, low power consumption and a wide range of frequencies. The HN4A06J (TE85L,F) transistors are designed with two PNP connections, specifically designed to allow current to enter the transistor from the two pins at the top and flow out from the two pins at the bottom. The HN4A06J (TE85L,F) transistors also feature a base and a collector. The collector is connected to the negative end of the power source and the base is connected to the positive end. This connection creates a bias voltage which causes current to flow through the transistor when a signal is received. The application field and working principle of HN4A06J (TE85L,F) transistors is extremely wide and versatile. These bipolar Junction Transistors are small, light and powerful and can be used in almost any application where amplification, distortion control, stabilization, and current limiting are required.

Conclusion

HN4A06J (TE85L,F) transistors are an incredibly versatile electronic component that is widely used in many applications, from audio amplifiers to voltage regulators. They feature two pins for current entry and exit, three for voltage control and a base/collector connection. The HN4A06J (TE85L,F) transistors use a semiconductor material to allow current and voltage to be amplified and controlled with great precision and a low amount of power. This makes them incredibly useful for a wide range of electronic applications.

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