HN4A56JU(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 6V
Power - Max:	200mW
Frequency - Transition:	60MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:	USV

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Transistors - Bipolar (BJT) - Arrays - HN4A56JU(TE85L,F) Application Field and Working Principle

A high-performance low-current HN4A56JU(TE85L,F) NPN transistor array is a Monolithic device, used in switching and amplifying circuits. It features four NPN transistors in a single package, with a total common emitter current gain range of 400-800 and a current-gain cutoff frequency (fT) of about 500MHz.The unit has a maximum working voltage of 125V, and a maximum collector current of 500mA. For a low-noise application, the base-emitter voltage (VBE) can be kept under 20mV, while an input bias current of over 200µA is hardly noticeable.The biggest advantage of the HN4A56JU(TE85L,F) NPN transistor array is that it can be utilized in many different applications. It is widely used in industrial and commercial electronic applications, such as communication systems, medical systems, lighting controls, power conversion, automotive applications and home appliance controllers.The HN4A56JU(TE85L,F) NPN transistor array works on the principle of amplification. It utilizes the base-emitter bias point of a bipolar transistor to amplify small input signals. The base-emitter junction is forward biased and the collector is biased to a negative voltage, using the current-gain ratio (beta) to regulate the amplification of the signal.The device also utilizes the collector current to control the output of an amplifier. The additional emitter current can either be used to boost the input signal (increase gain) or reduce it (decrease gain). When the input signal is applied, the transistor is switched on, allowing the current to flow through the output device. When the input is removed, the transistor is switched off and the current no longer flows through the output device.Additionally, the HN4A56JU(TE85L,F) NPN transistor array has a built-in early voltage protection circuit to prevent over-voltage damage. This is done by inserting a zener diode at the base of the transistor which will turn on when the collector-emitter voltage becomes too large, preventing the transistor from damaging itself.In conclusion, the HN4A56JU(TE85L,F) NPN transistor array is a highly capable and reliable device, widely used for many industrial and commercial electronic applications. While its operational parameters and specifications can vary depending on the application, its core principle of amplification allows it to perform its duties with ease. Furthermore, the built-in protection circuit helps to protect the device in case of over-voltage damages.

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