HN4B01JE(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 10MA, 100MA
Power - Max:	100mW
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-553
Supplier Device Package:	ESV

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Introduction of the HN4B01JE(TE85L,F)

The HN4B01JE(TE85L,F) transistor arrays refer to bipolar (BJT) type transistors which are widely used in many fields. It is mainly used to provide high speed switching, which can be applied in many applications such as amplifiers, DC-DC converters or control circuits. The HN4B01JE(TE85L,F) transistors are very suitable for industrial and automotive environment because of their high thermal stability and excellent reliability.

Detailed Specification and Features of HN4B01JE(TE85L,F)

The HN4B01JE(TE85L,F) transistor arrays are designed with high-voltage bipolar transistors. Their detailed features include:1. Maximum collector current of 1.0A.2. Maximum collector dissipation of 0.25W. 3. Collector-emitter voltage of 35V 4. Operating temperature range from –55°C to + 150°C. 5. Good high temperature stability. 6. Fast switching time, response time and switching speed. 7. Efficient operation, minimal power loss.

Applications of HN4B01JE(TE85L,F)

The HN4B01JE(TE85L,F) transistor arrays are most applied in applications where speed and efficiency are required, such as DC-DC converters, motor control circuits, voltage regulators and general amplifier circuits. Moreover, due to its excellent high temperature stability and excellent reliability, it is widely used in automotive applications and other harsh industrial environment.

Working Principle of HN4B01JE(TE85L,F)

The HN4B01JE(TE85L,F) transistor array works as a current amplifier which controls the current through an external circuit. It consists of a semiconducting material as the base which acts as a gate to control the passage of an electrical current when a voltage is applied to it. The emitter is connected to the positive voltage supply terminal and the collector is connected to the negative voltage terminal. When a voltage is applied at the base, the electrons move into the emitter and then to the collector. As the current moves, a feedback is formed, which controls the voltage through the external circuits.

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