HN4B04J(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	SMV

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Transistors – Bipolar (BJT) – Arrays

HN4B04J (TE85L,F) is a type of transistor package related to the Bipolar Junction Transistor (BJT) family. It includes an array of four transistors, with the suffix “F” indicating that the subtype of the package is meant for plastic-encapsulated transistors. In this article, the application field of HN4B04J (TE85L,F) and its working principle is discussed.

Application Field

The HN4B04J (TE85L,F) package is mainly used in low- to medium-power audio amplifiers, operational amplifiers and in switching circuits. The transistors used in the package are typically either of NPN or PNP configuration of miniature plastic-encapsulated type and can provide an output power of approximately 1 watt in general. The transistors have a full range of current and voltage ratings, including a breakdown voltage rating ranging from 5V to 80V, a current gain of 10 to 80, a collector current rating ranging from 0.2A to 1.5A and a reverse collector-emitter voltage rating ranging from 5V to 80V. The HN4B04J (TE85L,F) package can be used in wide range of consumer and industrial applications, including, but not limited to, consumer audio amplifiers, power supplies, specialty power amplifiers, power circuitry, industrial power supplies, and communication systems. The HN4B04J (TE85L,F) transistor array\'s flexibility makes it an ideal choice for a variety of commercial and industrial applications.

Working Principle

The HN4B04J (TE85L,F) package includes four transistors of either PNP or NPN configurations. This means that the working principle of the package is based on the behavior of the individual transistors within the package, which applies to all BJT devices.At the heart of a BJT is the base-to-emitter junction, which acts as a diode. This diode is known as the Bi-Polar Junction and it allows current to flow in either direction, allowing the BJT to act as an amplifier. The base of a BJT is connected to a current-controlling device, such as a resistor. When this current-controlling device is connected to a positive voltage, the base-to-emitter junction allows current to flow from the base to the emitter. This current then flows through the collector-base junction, which acts as a resistor, resulting in current flow out of the collector.The four transistors within the HN4B04J (TE85L,F) package are able to work together to amplify the input voltage. This is done by connecting the transistors in different configurations, such as in parallel for increased gain, or in series for increased output power. Furthermore, the combination of the package\'s four transistors allows for a range of output voltage levels ranging from dropout voltage to saturation voltage. In conclusion, the HN4B04J (TE85L,F) package is an ideal choice for a variety of commercial and industrial applications. It operates on the same principles as all BJT packages, and is able to provide a wide range of output voltage levels due to its four transistor combination.

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