HP8K22TB

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	--
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	27A, 57A
Rds On (Max) @ Id, Vgs:	4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 15V
Power - Max:	25W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-HSOP

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HP8K22TB Application Field and Working Principle

The HP8K22TB is a multiple-gate metal-oxide field-effect transistor (MOSFET) array designed for a variety of analog and digital applications. This versatile device is intended for voltage-controlled switching and amplifying purposes and is also suitable for current measurement and device driving. The HP8K22TB contains two gates and provides low on-resistance as well as forward and reverse conduction capabilities.

MOSFET Arrays

MOSFET arrays are designed for simple and complex applications requiring moderate voltage and low current. When the gate voltage is applied, the device is considered to be in the on state and gives off its desired conductive current according to the voltage applied on the drain. When the gate voltage is removed, the device is in the off state and no current flows through the transistor.The HP8K22TB multiple-gate MOSFET array contains two built-in gates and two high-impedance nodes called “drains”. The two gates allow the device to accept either positive or negative gate voltage depending on the load the device is driving, while the two drains are used to provide the required voltage and current necessary to drive the device.The HP8K22TB is a high-performance device with low saturation voltage and superior forward and reverse conduction capabilities. The device has a high on-resistance, which is inversely proportional to the gate voltage, meaning the higher the gate voltage, the lower the on-resistance and vice versa. The device also provides high efficiency switching and excellent voltage and temperature stability for reliable implementation in many applications.

Application Fields

The HP8K22TB MOSFET array provides variable resistance and controllable current when driving medium current applications, enabling time-saving and cost-effective solutions for circuit design engineers. Due to its superior attributes, the device is suitable for a variety of analog and digital applications such as:* Motor control: The HP8K22TB is used to switch and control the current in bipolar and unipolar motors, providing high power efficiency and freedom of user control with variable sensitivity options.* Broadcast systems: As broadcast systems require smooth and accurate tuning, the HP8K22TB provides an ideal solution with its low on-resistance and high switching speed.* Data communication systems: Due to its high temperature stability and superior current control, the HP8K22TB is used in data communication systems that require accurate high speed operation.* Industrial automation: The device is also used in industrial automation, providing reliable control by accurately adjusting the conduction angle of the motors used in in production processes.

Working Principle

In MOSFET arrays, the built-in gate is used to control the voltage applied to the drains and consequently control the current passing through the device. When a positive gate voltage is applied, the device allows a high current flow through its drains, while a lower positive gate voltage results in a lower current flow. A negative voltage applied to the gate reverses the operation and the current flow is reduced.The performance of the HP8K22TB is mainly determined by the “threshold voltage”, which is the voltage at which the device starts to conduct current. The current is at its maximum when the gate voltage is at its highest, and it decreases when the gate voltage drops. By adjusting the gate voltage, the current passing through the drains can be accurately controlled.

Conclusion

The HP8K22TB MOSFET array is a versatile device suitable for a variety of analog and digital applications including motor control, broadcast systems, data communication systems, and industrial automation. The device provides superior low saturation voltage and low on-resistance, enabling reliable current control and efficient operation. The device also has high temperature stability, making it a reliable choice for circuit design engineers.

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