Allicdata Part #: | HP8S36TBTR-ND |
Manufacturer Part#: |
HP8S36TB |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 30V NCH+NCH MIDDLE POWER MOSFET, |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 80... |
DataSheet: | HP8S36TB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.36941 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 27A, 80A |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 6100pF @ 15V |
Power - Max: | 29W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-HSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HP8S36TB is an all-silicon, surface-mountable, high voltage and high-performance n-channel power MOSFET array made with advanced E-mode TrenchOxide™ technology. It is suitable for use in power switch applications where a floating body is essential in order to preserve the on/off state of the nearest neighbour FETs.The HP8S36TB features an innovative floating body design that maximizes the performance of each element within the array, allowing each element to act independently from the others. This feature allows for a wide range of power supply voltages and current requirements.The HP8S36TB is an ideal solution for applications such as DC-DC converters, motor controllers, power supplies and inverters where high voltage and high-performance MOSFETs are required.The operation of the HP8S36TB relies on an innovative design which employs a unique floating body junction between the gate and source of each element within the device. This floating body junction ensures that each element of the device can be independently controlled. Moreover, the junction voltage is maintained at the same level regardless of the voltage applied across the drain and source.The device is available in a variety of different packages and can be used in a variety of different applications. The device is well-suited for use in high-voltage environments and is capable of operating at temperatures up to 200°C without any additional cooling requirements.In terms of its operation, the device works by forming an electrostatic field between the gate and the source of each element of the device. This field is controlled via the gate of each element, allowing the user to both control the current flow and turn the device on or off.Furthermore, the device features a low-resistance on-state and a very low gate voltage threshold, allowing for fast switching speeds and low power consumption. The device also features soft-switching and active clamping capabilities, allowing for pre-charging of the gate and improved efficiency in applications that require high switching speed.Overall, the HP8S36TB is an excellent solution for a wide range of power switch applications where high voltage and high-performance MOSFETs are required. It offers an innovative floating body design which improves the performance of each element within the array, and its low power consumption, high current ratings and fast switching speeds make it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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HP8S36TB | ROHM Semicon... | 0.41 $ | 1000 | 30V NCH+NCH MIDDLE POWER ... |
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