HS1BL RQG Allicdata Electronics
Allicdata Part #:

HS1BLRQG-ND

Manufacturer Part#:

HS1BL RQG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A SUB SMA
More Detail: Diode Standard 100V 1A Surface Mount Sub SMA
DataSheet: HS1BL RQG datasheetHS1BL RQG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.03990
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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HS1BL RQG Application Field and Working Principle

HS1BL RQG is one of the most popular single rectifier diodes available today. It has been demonstrated in a wide range of applications, including power supply, communications, and automotive. The HS1BL RQG device has a relatively low cost, high ability to withstand transient voltage shocks, and high reliability. As such, it is a popular choice for applications that require high reliability and long life.

Principle of Operation

The HS1BL RQG device is a single-phase rectifier diode with a blocking voltage of 400V (VRRM). It is a four layer diode constructed of a P-N junction and two external anti-parallel electrodes. When forward biased, the P-N junction is forward biased, allowing the electron to flow from the anode to the cathode and the current to flow from the cathode to the anode.The HS1BL RQG also has a reverse voltage breakdown (VRBO) mechanism. When the reverse voltage reaches the breakdown voltage, the current flow through the diode suddenly increases. The higher the voltage, the larger the current flow. Therefore, when the forward current is applied, the diode will become forward biased and the current flow increases to a certain limit. After that the current will be limited by the reverse voltage.The HS1BL RQG also has a number of safety features. These include reverse polarity protection and a self-extinguishing mechanism. The former will prevent the current flow if reverse polarity is applied, while the latter will shut off the diode if the temperature exceeds the maximum current rating of the diode.

Applications

The HS1BL RQG is a popular choice for various rectifying and switching applications. This device is the best choice for high-frequency and high-current applications, such as AC-DC power supplies and motor drives. It is also suitable for automotive applications, where reliable switching action is required.In addition to AC-DC power supplies and motor drives, the HS1BL RQG is also used in amplitude modulation (AM) and frequency modulation (FM) communications systems. It is also useful for automation and control applications, such as buffer amplifiers, switching systems, and voltage multipliers.

Advantages

The HS1BL RQG is a single-phase rectifier diode that offers several benefits over other types of rectifiers. One of the main benefits is its high reliability. This is due to its robust construction and its ability to withstand transient voltage shocks. The HS1BL RQG also has a low on-state voltage drop, which makes it suitable for applications that require a high amount of current. It also has a high breakdown voltage and a low forward voltage.The HS1BL RQG also has a number of safety features, such as reverse polarity protection and a self-extinguishing mechanism. This ensures that the diode will not be permanently damaged as a result of an over-voltage situation.Overall, the HS1BL RQG is an excellent choice for high-performance, reliable rectifier operations. It is used in a wide range of applications, and its design and construction make it well suited for any application that requires reliable performance in the face of transient voltage shocks.

The specific data is subject to PDF, and the above content is for reference

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