HS1FL RTG Allicdata Electronics
Allicdata Part #:

HS1FLRTG-ND

Manufacturer Part#:

HS1FL RTG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 300V 1A SUB SMA
More Detail: Diode Standard 300V 1A Surface Mount Sub SMA
DataSheet: HS1FL RTG datasheetHS1FL RTG Datasheet/PDF
Quantity: 1000
15000 +: $ 0.03493
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HS1FL RTG Application Field and Working Principle

HS1FL RTG (Reverse Transfer Gate) is a type of diode, rectifier, and single component. It belongs to the family of field-gate insulated gate bipolar transistors (IGBTs). It is a device used to turn current off and on by applying a negative voltage in reverse-transfer mode from the source to the gate. HS1FL RTG is used mainly in power supplies and other electronic equipment.

Application Field

The HS1FL RTG is mainly used in applications such as:

  • Switching power supply
  • Soft-switch power supply
  • AC/DC converters
  • DC/DC converters
  • Power Factor Correction (PFC) converters
  • AC/AC converters
  • Bidirectional inverters
  • High-frequency lighting systems
  • Solar Inverters
  • Motor Drives
  • Electric vehicles/Hybrid electric vehicles/Hybrid solar vehicles

Working Principle

The HS1FL RTG is a static device and is normally on. It can be turned off by applying a negative voltage applied in reverse-transfer mode from the source to the gate. The voltage has to be higher than the forward voltage applied (V_fo). The amount of negative voltage must be higher than the amount of forward bias voltage applied in order to turn off the device. The amount of negative voltage required varies with each device and depends on the device\'s characteristics and the forward voltage applied.

The gate junction of HS1FL RTG is insulated from the substrate and it is connected to a gate capacitor that provides a low impedance circuit. The gate capacitor is connected to the source of the device and the voltage applied either forward or in reverse mode flows through it.

When the reverse voltage is applied, it creates a field which induces a negative charge on to the gate capacitor. This field drives electrons from the source and the gate junction to the gate capacitor. This reverse bias creates additional a reverse transfer gate which further amplifies the effect of the reverse voltage applied and makes the bipolar junction transistor (BJT) turn off. This prevents current from flowing from source to drain.

The gate and source junction will remain in the off state until the gate voltage is reduced to below the forward voltage applied to the gate junction. At this point the field will no longer be present and the electrons will be re-distributed and the device will be on again.

Conclusion

HS1FL RTG is a diode, rectifier, and single component used in applications such as switching power supplies and solar inverters. It is a static device and can be turned off by applying a negative voltage in reverse-transfer mode from the source to the gate. It has a gate junction that is insulated from the substrate and is connected to a gate capacitor that provides a low impedance circuit. The reverse voltage applied creates a field that induces a negative charge on to the gate capacitor and drives electrons from the source and gate junction to the gate capacitor. This reverse bias creates an additional reverse transfer gate which further magnifies the effect of the reverse voltage and turns the device off.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "HS1F" Included word is 13
Part Number Manufacturer Price Quantity Description
HS1FL RVG Taiwan Semic... 0.05 $ 6000 DIODE GEN PURP 300V 1A SU...
HS1F M2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A DO...
HS1FL RHG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL MHG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL MQG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL MTG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL RQG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL RTG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL RUG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1F R3G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 300V 1A DO...
HS1FL M2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL R3G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 300V 1A SU...
HS1FL RFG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 300V 1A SU...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics