Allicdata Part #: | HS1FLRTG-ND |
Manufacturer Part#: |
HS1FL RTG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 1A SUB SMA |
More Detail: | Diode Standard 300V 1A Surface Mount Sub SMA |
DataSheet: | HS1FL RTG Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.03493 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HS1FL RTG Application Field and Working Principle
HS1FL RTG (Reverse Transfer Gate) is a type of diode, rectifier, and single component. It belongs to the family of field-gate insulated gate bipolar transistors (IGBTs). It is a device used to turn current off and on by applying a negative voltage in reverse-transfer mode from the source to the gate. HS1FL RTG is used mainly in power supplies and other electronic equipment.
Application Field
The HS1FL RTG is mainly used in applications such as:
- Switching power supply
- Soft-switch power supply
- AC/DC converters
- DC/DC converters
- Power Factor Correction (PFC) converters
- AC/AC converters
- Bidirectional inverters
- High-frequency lighting systems
- Solar Inverters
- Motor Drives
- Electric vehicles/Hybrid electric vehicles/Hybrid solar vehicles
Working Principle
The HS1FL RTG is a static device and is normally on. It can be turned off by applying a negative voltage applied in reverse-transfer mode from the source to the gate. The voltage has to be higher than the forward voltage applied (V_fo). The amount of negative voltage must be higher than the amount of forward bias voltage applied in order to turn off the device. The amount of negative voltage required varies with each device and depends on the device\'s characteristics and the forward voltage applied.
The gate junction of HS1FL RTG is insulated from the substrate and it is connected to a gate capacitor that provides a low impedance circuit. The gate capacitor is connected to the source of the device and the voltage applied either forward or in reverse mode flows through it.
When the reverse voltage is applied, it creates a field which induces a negative charge on to the gate capacitor. This field drives electrons from the source and the gate junction to the gate capacitor. This reverse bias creates additional a reverse transfer gate which further amplifies the effect of the reverse voltage applied and makes the bipolar junction transistor (BJT) turn off. This prevents current from flowing from source to drain.
The gate and source junction will remain in the off state until the gate voltage is reduced to below the forward voltage applied to the gate junction. At this point the field will no longer be present and the electrons will be re-distributed and the device will be on again.
Conclusion
HS1FL RTG is a diode, rectifier, and single component used in applications such as switching power supplies and solar inverters. It is a static device and can be turned off by applying a negative voltage in reverse-transfer mode from the source to the gate. It has a gate junction that is insulated from the substrate and is connected to a gate capacitor that provides a low impedance circuit. The reverse voltage applied creates a field that induces a negative charge on to the gate capacitor and drives electrons from the source and gate junction to the gate capacitor. This reverse bias creates an additional reverse transfer gate which further magnifies the effect of the reverse voltage and turns the device off.
The specific data is subject to PDF, and the above content is for reference
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