HS1FL RUG

Diodes - Rectifiers - Single

The HS1FL RUG (Ruggedized Ultra-Fast Rectifier) device is an ultra-fast silicon rectifier that is designed to meet the most demanding requirements of automotive, off-line and telecom applications. HS1FL RUG provides 10x higher forward surge capability than the its standard counterpart HS1FL diode, allowing it to be used in harsher environments. This device utilizes a pair of high-temperature NPN and PNP transistors in the rectification process. The combination of NPN and PNP transistors provides very good rectification efficiency, fast switching speed and improved forward voltage drop (VF).

Application Field

The HS1FL RUG can be used in a variety of applications including: high power DC-DC converters, laser power supplies, rectifier circuits, pulse transformer circuits and DC motor commutation circuits. In addition, the device is also suitable for automotive, off-line and telecom applications where high surge capability and reliability are required.

Working Principle

HS1FL RUG has two transistors, one PNP and one NPN, connected in series with each other to form a rectifier circuit. When the input voltage is applied, the PNP transistor turns on and allows current to flow from the collector to the emitter. At the same time, the NPN transistor turns on and allows current to flow from the emitter to the collector. Thus, the rectifier circuit is able to produce two rectified output voltages, one from the PNP transistor and one from the NPN transistor. The voltage from the PNP transistor is the positive output and the output from the NPN transistor is the negative output. Because of the high-temperature operation and the fast switching speed, the HS1FL RUG offers improved forward voltage drop and surge capability.

Conclusion

In conclusion, the HS1FL RUG is an ideal choice for automotive, off-line and telecom applications where high surge capability and fast switching speeds are required. This devices utilizes a pair of high temperature NPN and PNP transistors to achieve improved forward voltage drop and rectification efficiency. Additionally, the device offers 10x higher surge capability than its standard counterpart HS1FL diode making it suitable for use in harsh environments.