HS1GL M2G Allicdata Electronics
Allicdata Part #:

HS1GLM2G-ND

Manufacturer Part#:

HS1GL M2G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 400V 1A SUB SMA
More Detail: Diode Standard 400V 1A Surface Mount Sub SMA
DataSheet: HS1GL M2G datasheetHS1GL M2G Datasheet/PDF
Quantity: 1000
7500 +: $ 0.04167
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

HS1GL M2G is a kind of single diode with high current load capacitance, wide operating temperature range and high power rating. It is designed for rectifier application which needs high power in small size package. Besides its feature of fast switching speed, this diode also has a high average forward voltage.

Application fields

  • Power converter.
  • Power device.
  • High voltage equipment.
  • Industrial and automotive.
  • Communication.
  • Lighting.
  • Consumer electronics.

Working principle

The HS1GL M2G diode has a unique design which provides fast and efficient power switching performance. The diode has two main sections, an anode and a cathode. The anode section and the cathode section are connected with an insulation layer, forming a single junction. This allows electrons to move between these two sections.

The electrical conductivity of the insulation layer determines the current flow through the device. When the voltage across the anode and cathode reaches a certain level, the current flows from the anode to the cathode and charges the device. As the device charges, the current flow will decrease until eventually the diode reaches a ‘saturation’ point, and no current is flowing between the two sections.

The diode is designed for power switching applications as the saturation point allows for fast and efficient power switching between the two sections. This allows for the current to change direction quickly, making the device ideal for high speed switching applications which require precise power control.

The HS1GL M2G diode also has a unique design which allows it to dissipate heat up to a much higher temperature than other diodes. This allows the device to run at higher temperatures while still functioning correctly, making it ideal for applications which require higher temperatures.

Conclusion

The HS1GL M2G diode is designed for applications which require efficient and precise power switching. It has a wide operating temperature range and a high average forward voltage, making it excellent for power switching applications. Its fast switching speed, high current load capabilities, and high power rating make it ideal for a variety of applications, including power converters, high voltage equipment, industrial and automotive applications, lighting and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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