| Allicdata Part #: | HS1GLR3G-ND |
| Manufacturer Part#: |
HS1GL R3G |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 400V 1A SUB SMA |
| More Detail: | Diode Standard 400V 1A Surface Mount Sub SMA |
| DataSheet: |  HS1GL R3G Datasheet/PDF |
| Quantity: | 1000 |
| 7200 +: | $ 0.04489 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
| Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The HS1GL R3G is a germanium diode rectifier designed for general purpose applications. It is designed for low voltage, low current applications, such as small AC/DC converters, battery chargers, voltage regulator circuits and power supply designs. It is also suitable for use in specialized electronic and RF circuits.The HS1GL R3G is a low power rectifier that is capable of handling up to 0.75 amperes at a forward voltage of 3 volts. It has a reverse leakage current of 5 μA at reverse voltage of 30 volts, making it suitable for use in low voltage applications. The diode has a maximum temperature rating of 80°C. The HS1GL R3G is a planar double-diffused vertical diode with integrated protection diode. It is constructed using a silicon wafer and uses a formalceramic socket for mounting. Its construction is such that it can be used in a wide variety of applications, making it a versatile option.The HS1GL R3G has a unique feature known as “gas-retardation” which helps protect the device from overvoltage surges. This feature reduces the likelihood of the device failing in the event of a transient or overvoltage surge.The working principle of the HS1GL R3G diode is based on p-n junction semiconductor theory. When current is applied to the diode, the electrons flow through the p-region, creating a potential barrier that prevents current from flowing in the reverse direction. The p-n junction acts as a one-way gate, allowing current to flow through it in one direction only.The HS1GL R3G is a very versatile and reliable diode that is suitable for a wide range of applications. The combination of its low power consumption, low voltage operating range, low leakage current and its integrated protection diode makes it an ideal choice for many applications. The HS1GL R3G is an excellent choice for cost-sensitive designs, as it is cost-effective and reliable.
The specific data is subject to PDF, and the above content is for reference
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