Allicdata Part #: | HS3AV6G-ND |
Manufacturer Part#: |
HS3A V6G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | HS3A V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06357 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HS3A V6G diode is a rectifying diode belonging to the category of Single diodes. It is an optimized, high-speed medium-power rectifier diode featuring low forward voltage and low reverse leakage current. Thanks to these features, HS3A V6G provides an excellent rectifying effect and is employed in several diverse applications.
HS3A V6G is especially well-suited for rectifying power electronics in motor drives, wind turbines, solar energy, power transmission systems, and high-speed gate drive circuits. It is also suitable for use in computer switching power supplies, UPS power supplies, high-frequency telecommunication power supplies, and other power electronic rectifying applications.
HS3A V6G is constructed using an epitaxial silicon substrate and a precision-controlled high-voltage passivation technology. Its reverse voltage rating is 400V and it can withstand repetitive peak surge currents up to 1500A. Its avalanche-rated operating temperature is -40 to +150℃.
HS3A V6G’s working principle operates on the idea of forward bias, whereby a voltage is applied to a diode that causes electrons to move toward its equilibrium potential, creating a highly conductive path for the current to pass through. When the voltage is reversed, the current will not flow through the diode. The HS3A V6G is designed with a large junction capacitance and a low junction barrier to provide low reverse leakage current and fast switching speeds.
HS3A V6G has excellent forward-voltage characteristics, with a maximum of 1.05V and a typical forward voltage of 0.77V at 1A. Its reverse leakage current of less than 10µA from -25℃ to +125℃ allows any diode in the series to remain in a reverse-bias low-leakage current state.
HS3A V6G’s robust construction allows it to withstand reverse surge currents up to 1500A which makes it ideal for use in a wide range of applications. Its fast switching speeds and low forward voltage ensure that it is able to operate efficiently and accurately in high-frequency switching applications.
The HS3A V6G diode is an important component in the world of power supplies, motors and other rectifying applications, thanks to its excellent performance, low forward voltage and low reverse leakage current. Its robust construction and fast switching speeds make it an ideal choice for a variety of power rectifying tasks.
The specific data is subject to PDF, and the above content is for reference
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