HS3B V6G Allicdata Electronics
Allicdata Part #:

HS3BV6G-ND

Manufacturer Part#:

HS3B V6G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 3A DO214AB
More Detail: Diode Standard 100V 3A Surface Mount DO-214AB (SMC...
DataSheet: HS3B V6G datasheetHS3B V6G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.06357
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HS3B V6G device is widely used in a variety of power, industrial, electronic and telecom applications. This device belongs to the diodes-rectifiers-single category.

This product is constructed with a glass passivated junction, with a certified peak reverse voltage rating of 600V and a VF (Forward Voltage) rating of 1.2V max @ IF = 2A (Tamb = 25°C).

The HS3B V6G is equipped with a stud mounted or C-clip mechanical package enabling transparent or shrouded heatsink mounting. This device is designed for surface mounting, restricted mounting orientations and bending of the body are not permitted.

The HS3B V6G is available in three versions: 0.8A, 1.2A and 2.0A with a low forward voltage drop and a high surge capability of 220A@25°C for 0.8A and 340A@25°C for 1.2A, and 2A.

The device is an ideal choice for applications such as switching power supplies, UPS systems,automotive inverters, lighting, DC-DC converters, ballast, chargers, mobile computer adapters and consumer applications.

The working principle of this device is based on its construction as a dual function device. It has both a rectifying and an protecting function. The rectification is performed by the forward diodes and the reverse blocking is provided by the back barrier diodes. This ensures a low forward voltage drop and a high surge capability. The device also provides a large junction area which allows for higher temperature operation.

Using this device, heat dissipation is significantly reduced, enabling a low thermal impedance. This feature is especially valuable in applications where high power dissipation is required, such as motor and solar applications.

In addition, the HS3B V6G also features full electrical isolation between the input and output terminals, providing superior EMI/RFI performance, ensuring reliable and efficient operation.

The HS3B V6G is an ideal choice for those applications requiring high surge capability, full insulation, low forward voltage drop and low thermal resistance. With its superior performance, reliability and safety, the HS3B V6G device is a perfect choice for power, industrial, electronic and telecom applications.

The specific data is subject to PDF, and the above content is for reference

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