
Allicdata Part #: | HS3BV6G-ND |
Manufacturer Part#: |
HS3B V6G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO214AB |
More Detail: | Diode Standard 100V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.06357 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HS3B V6G device is widely used in a variety of power, industrial, electronic and telecom applications. This device belongs to the diodes-rectifiers-single category.
This product is constructed with a glass passivated junction, with a certified peak reverse voltage rating of 600V and a VF (Forward Voltage) rating of 1.2V max @ IF = 2A (Tamb = 25°C).
The HS3B V6G is equipped with a stud mounted or C-clip mechanical package enabling transparent or shrouded heatsink mounting. This device is designed for surface mounting, restricted mounting orientations and bending of the body are not permitted.
The HS3B V6G is available in three versions: 0.8A, 1.2A and 2.0A with a low forward voltage drop and a high surge capability of 220A@25°C for 0.8A and 340A@25°C for 1.2A, and 2A.
The device is an ideal choice for applications such as switching power supplies, UPS systems,automotive inverters, lighting, DC-DC converters, ballast, chargers, mobile computer adapters and consumer applications.
The working principle of this device is based on its construction as a dual function device. It has both a rectifying and an protecting function. The rectification is performed by the forward diodes and the reverse blocking is provided by the back barrier diodes. This ensures a low forward voltage drop and a high surge capability. The device also provides a large junction area which allows for higher temperature operation.
Using this device, heat dissipation is significantly reduced, enabling a low thermal impedance. This feature is especially valuable in applications where high power dissipation is required, such as motor and solar applications.
In addition, the HS3B V6G also features full electrical isolation between the input and output terminals, providing superior EMI/RFI performance, ensuring reliable and efficient operation.
The HS3B V6G is an ideal choice for those applications requiring high surge capability, full insulation, low forward voltage drop and low thermal resistance. With its superior performance, reliability and safety, the HS3B V6G device is a perfect choice for power, industrial, electronic and telecom applications.
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