Allicdata Part #: | HS3BV7G-ND |
Manufacturer Part#: |
HS3B V7G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO214AB |
More Detail: | Diode Standard 100V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | HS3B V7G Datasheet/PDF |
Quantity: | 1000 |
1700 +: | $ 0.07382 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HS3B V7G diode is classified as a single rectifier, which is a type of diode that allows the current to flow in one direction and blocks the current from flowing in the opposite direction. The primary applications of the HS3B V7G diode are to convert alternating current (AC) to direct current (DC), to clamp a voltage, and to reduce voltage spikes.
The HS3B V7G is a 6.0A blocking rectifier designed to handle high voltage and high current applications. It has a maximum peak repetitive blocking voltage rating of 800V, a maximum RMS voltage of 560V, and a non-repetitive peak blocking of 1.2KV. It also has a maximum thermal resistance of 1.7K/W with an operating junction temperature of up to -40°C to 125°C.
The device utilizes two negatively-doped layers of semiconductor materials, sandwiched between two positively-doped layers. When the anode receives voltage, the electrons are attracted to the positively-doped layers and forced to move through the negatively-doped layers. This forms a closed circuit and allows the current to flow in one direction only, blocking off the current from flowing in the opposite direction.
In a voltage clamping application, the HS3B V7G diode is used to protect an electronic component from high voltage spikes. This is accomplished by connecting the anode of the diode to the component and the cathode to the power source. When the cathode receives a positive voltage that exceeds the diode’s blocking voltage, the diode will conduct, thus providing a low-impedance path and absorbing the energy of the spike.
The HS3B V7G can also be used to convert AC to DC. This process works by connecting the rectifier to an AC source so that the anode and cathode are switched back and forth. When the rectifier is in the forward bias, the electrons are able to move in a single direction and are then collected at the cathode. When the rectifier is in reverse bias, no current is able to pass through.
The HS3B V7G diode is also used to reduce voltage peaks in electronic circuits. When a voltage spike exceeds the diode’s blocking voltage, the diode will conduct and absorb the energy of the spike. Furthermore, the HS3B V7G has a low forward voltage drop, making it an ideal choice for reducing voltage peaks in high current circuits.
The HS3B V7G diode has a number of applications, including voltage clamping, AC to DC conversion, and voltage peak reduction. It is designed to handle high voltage and high current applications and has a maximum peak repetitive blocking voltage rating of 800V, a maximum RMS voltage of 560V, and a non-repetitive peak blocking of 1.2KV. Furthermore, the diode has a maximum thermal resistance of 1.7K/W with an operating junction temperature of up to -40°C to 125°C.
The specific data is subject to PDF, and the above content is for reference
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