Allicdata Part #: | HS3FV6G-ND |
Manufacturer Part#: |
HS3F V6G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 3A DO214AB |
More Detail: | Diode Standard 300V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | HS3F V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06357 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 300V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HS3F V6G is a single-phase general-purpose silicon rectifier diode. It is designed for use in general purpose power supplies, reverse-current protection circuits, and other general purpose rectifier applications. In addition, it can be used in AC/DC converter circuits and solenoid/motor driver circuits. This diode is designed with ultra-low RMA ratings and low junction-capacitance to achieve improved efficiency and faster switching times.
The HS3F V6G is constructed using an ultra-low-leakage Schottky barrier rectifier structure. This means the device has a high breakdown voltage and is capable of handling a maximum drain current of 5A and repetitive peak off-state voltage of 500V. It also has an isolation voltage of 1000Vrms and can withstand 25A surge forward current. The diode package is also designed with ESD protection, and can withstand a surge current of up to 10A.
The HS3F V6G is designed for use in a variety of applications, including power supplies, reverse-current protection circuits, AC/DC converters, and solenoid/motor driver circuits. The device is ideal for applications requiring ultra-low RMA ratings, and low junction-capacitance for improved efficiency and faster switching times. It can also be used in high-voltage and high-current applications, due to its high breakdown voltage and maximum drain current of 5A.
The working principle of the HS3F V6G is based on the Schottky diode structure. When a voltage is applied to the diode, it allows a current to flow in the forward direction while blocking the current in the reverse direction. The junction-capacitance of the device is also kept very low, allowing the device to switch faster and address the current requirements in a much more efficient manner. The diode also employs ESD protection, which helps protect the device from power surges.
The HS3F V6G is an excellent choice for rectifier applications that require a low RMA rating, high blocking voltage, and fast switching times. It can be used in a variety of power supply and protection circuits, and it is especially suitable for AC/DC converters, solenoid/motor driver circuits, and other general purpose rectifier applications. Furthermore, the device has a high isolation voltage of 1000Vrms, can withstand 25A surge forward current, and is capable of handling 10A surge current.
The specific data is subject to PDF, and the above content is for reference
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