HSCH-5314

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Introduction

The HSCH-5314 is a tandem high-side and low-side high-current RF switch with integrated bias port that is specifically designed for use in communication devices, such as mobile telephones, radio communication systems and digital television receivers. It is a member of the HSCH family of ultra-low profile, low-power, high-speed, high-current switches that have become increasingly popular for the efficient switching of high-frequency signals in the GHz range.

Application Field and Working Principle

The HSCH-5314 RF switch utilizes a common source/drain metal-oxide semiconductor field effect transistor (MOSFET) for the low-side RF path and a p-channel MOSFET for the high-side RF path. The integrated bias port provides an adjustable voltage source, enabling it to be used in both single supply and dual supply applications. This device is used to switch high frequency signals while providing high isolation, low insertion loss, and low power consumption.

The HSCH-5314 is suitable for use in a multitude of applications, ranging from radio and television broadcast systems to cellular communication systems. It is also used in applications such as switching of digital radio frequencies (DRF), television audio/video (AV), and Ultra-High Frequency (UHF) communications. The HSCH-5314 switch can also be used in power line communication systems, satellite communications, and navigation systems.

The HSCH-5314 utilizes a variety of schematic techniques to ensure high performance and reliability. In the low-side RF path, the combination of a fixed-bias source follower and a cascode gate buffer ensures fast switching speeds and low gate-source capacitance for frequency dependent gate resistors. Additionally, integrated gate resistors in the high-side RF path provide low switch noise and high harmonic suppression.

The HSCH-5314 device also employs a unique dual-interlocked power switch design, which provides the highest safety level in which the device can be operated. The device includes a low-side circuit breaker and a high-side circuit breaker that are interlocked in series, providing load disconnection in a single switch operation in the event of an over-current situation. Furthermore, a built-in over-temperature shutoff mechanism helps ensure maximum RF switch reliability and safety.

The HSCH-5314 device layouts have been designed for low noise and high isolation, providing excellent performance in the GHz range. The use of ceramic substrates minimizes parasitic inductance, providing a wider bandwidth and higher frequency performance. The device also includes an integrated ESD protection circuit, providing improved protection from electrostatic damage.

Conclusion

The HSCH-5314 RF switch is a highly efficient, low-power, and low-profile switch specifically designed for high-frequency applications in the GHz range. It integrates both a high-side and a low-side switch, allowing the signal to be switched while providing an excellent level of isolation, low insertion loss, and low power consumption. The device is suitable for use in a variety of radio and television broadcast systems, cellular communication systems, power line communication systems, navigation systems, and more. The combination of a fixed-bias source follower and a cascode gate buffer in the low-side RF path ensure fast switching speeds and low gate-source capacitance for excellent frequency dependent performance. The device also includes a low-side circuit breaker and a high-side circuit breaker, providing the highest level of safety in over-current situations. Moreover, a built-in over-temperature shut off mechanism enhances RF switch reliability and safety. As such, the HSCH-5314 RF switch is an ideal choice for high-frequency applications.

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