HSM5100GE3/TR13 Allicdata Electronics
Allicdata Part #:

HSM5100GE3/TR13-ND

Manufacturer Part#:

HSM5100GE3/TR13

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SCHOTTKY 100V 5A DO215AB
More Detail: Diode Schottky 100V 5A Surface Mount DO-215AB
DataSheet: HSM5100GE3/TR13 datasheetHSM5100GE3/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.57154
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: HSM5100
Description

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The HSM5100GE3/TR13 is a representative sample of diodes in the rectifier family that are utilized as single components. Essentially, it consists of a junction of a P-type and N-type semiconductor. It uses the spatial asymmetry of majority and minority carrier concentrations to allow unidirectional flow of current and is thus used commonly in power related designs.

There are several applications of HSM5100GE3/TR13 rectifier diode, where the major areas of physical realization is in the field of power electronics engineering. Essentially, the diode is utilized for power rectification, as a lightning or surge arrester, to provide voltage regulation, in freewheeling, to act as a basic low voltage power switch and for controlling AC induction motors. Ideal forward and reverse junction characteristics of the HSM5100GE3/TR13 rectifier make it convenient to effectively use in the above mentioned applications.

The working principle of HSM5100GE3/TR13 diode is based on the selective hydraulic flow of electrons, where it can generally be divided into two operating modes: forward biased and reverse biased. During forward region, the voltage across an anode and cathode increases and the diode conducts electric current in a manner such that the junction of P-N is able to act as an ohmic resistor. On the other hand, while in reverse region, the voltage across an anode and cathode decreases and the diode exhibits very high resistance. This is due to the spatial separation of majority carriers (holes and electrons) along the junction region, which forms an electronic barrier and blocks most of the flow of current through the device. This diode is also used as a freewheeling diode, which is applicable for the power generation industry and transportation systems.

In addition to that, this diode is practical for voltage surge and transient protection. A voltage clamp circuit can be constructed using a HSM5100GE3/TR13 diode, which makes it possible to limit voltages to a certain level. This is advantageous in the instance of a voltage spike, in which case strain on other circuits is prevented. The diode can also be used to regulate the intensity of a light emitting diode (LED) with a DC power supply. This can be done using either a resistor or cascade arrangement. While the former applies a constant current supply, the latter ensures that the LED is operated within a very specific range of current and voltage.

HSM5100GE3/TR13 diodes are also suitable to be utilized in motor control systems, specifically with AC induction motors. It has a number of electronic applications, most recently in power conditioning, artificial intelligence, electrochemical energy storage and motion control. This diode is usually made with crystalline silicon material (Si) or even gallium nitride (GaN), depending on the application demands.

In conclusion, HSM5100GE3/TR13 is a single component rectifier diode which mainly applies in the field of power electronics engineering. Its working principle is related to the selective hydraulic flow of electrons, particularly in two operating modes: forward bias and reverse bias. Apart from that, it is also suitable for voltage surge, voltage regulation, controlling AC induction motors, current regulation with cascade arrangement and protecting electronics from transients. Generally, this diode is composed of crystalline silicon material or gallium nitride and it is continuously evolving in its sorting, packaging and size optimization.

The specific data is subject to PDF, and the above content is for reference

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