Allicdata Part #: | HSM580G/TR13-ND |
Manufacturer Part#: |
HSM580G/TR13 |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 80V 5A DO215AB |
More Detail: | Diode Schottky 80V 5A Surface Mount DO-215AB |
DataSheet: | HSM580G/TR13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.93492 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 250µA @ 80V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-215AB, SMC Gull Wing |
Supplier Device Package: | DO-215AB |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | HSM580 |
Description
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The HSM580G/TR13 is a single diode rectifier specifically designed for high current operation. It is a high-efficiency, highly reliable rectifier that takes advantage of a low forward voltage drop for high efficiency and low power losses. The maximum reverse voltage for the HSM580G/TR13 is 18 volts, while its maximum average forward current is 10.5 A. The forward voltage drop of the HSM580G/TR13 is 0.45 volts at 1mA and its reverse current leakage is very low at only 100 nA.The HSM580G/TR13 is designed for use in a wide range of applications, such as switching power supplies, automotive electronics, personal computers, portable batteries, solar cells, and many more. It is ideal for use in power supply applications that require low power losses, high efficiency, and high reliability. In addition, the HSM580G/TR13 can be used in many other applications such as battery chargers, motor controls, and other high current circuits.The HSM580G/TR13 is composed of a rectifying diode and a silicon semiconductor substrate, which makes it suitable for high-power applications. The rectifying diode is typically made of PN junction, which allows for a low level of leakage current, a low capacitor switch-off voltage, and fast switching times. As the rectification process takes place, energy is stored in the silicon semiconductor substrate, thus resulting in an efficiency increase and an associated reduction in power loss.The rectification process of the HSM580G/TR13 is composed of two main stages: the Forward Voltage Drop (FVD) stage and the Reverse Current Leakage (RCL) stage. During the FVD stage, the PN junction of the rectifying diode is used to channel the electrical current to a specific direction and the current is then blocked from moving in the reverse direction. This forward voltage drop is responsible for the high efficiency of the rectifier.During the RCL stage, the reverse current leakage is used to regulate the voltage, so that it does not exceed the maximum reverse voltage rating of 18 volts. This ensures that the device operates safely and reliably, and protects it from electrical damage.The HSM580G/TR13 can typically operate with a higher current than other rectifiers. It has a low forward voltage drop, so it is more efficient, and it has a lower power loss than other rectifiers. Additionally, the HSM580G/TR13 has a high reverse current leakage and fast switching times, making it ideal for high power applications. In conclusion, the HSM580G/TR13 rectifier is an excellent choice for high current applications due to its low forward voltage drop, high efficiency, and low power losses. It is highly reliable, and its fast switching times and low reverse current leakage make it ideal for applications that require high power without compromising on safety.
The specific data is subject to PDF, and the above content is for reference
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