HTMN5130SSD-13 Allicdata Electronics
Allicdata Part #:

HTMN5130SSD-13DITR-ND

Manufacturer Part#:

HTMN5130SSD-13

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 55V 2.6A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 55V 2.6A 1.7W Surf...
DataSheet: HTMN5130SSD-13 datasheetHTMN5130SSD-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.64348
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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A metal oxide semiconductor field-effect transistor (MOSFET) array is an array of transistors arranged in one or more ranks to enable greater electrical control of current flow and to serve various applications. One of the most popular MOSFET array models is the HTMN5130SSD-13. This article will discuss the application fields and working principle of the HTMN5130SSD-13.

Application Fields

The HTMN5130SSD-13 MOSFET array is used in a variety of applications including power distribution, motor control and speed control. It is capable of handling currents up to 180A and operates at voltages up to 600V. This makes it suitable for a range of power applications, such as power supplies, rectifiers, inverters and UHP motors. It is also used in lighting applications and switching circuits. This model is suitable for the automotive industry since it has a low gate drive voltage and a wide temperature range.

The HTMN5130SSD-13 is also used in instrumentation and communications applications, such as amplifiers, receivers and transmitters. This model is suitable for a wide range of industrial applications and is often used in consumer electronics. It is capable of handling a high switching frequency and is designed to minimize power losses.

Working Principle

The HTMN5130SSD-13 is a MOSFET array that controls current flow in a circuit. It is composed of an array of transistors connected in one or more ranks to control the current flow in the circuit. Each transistor is composed of a source and a drain, separated by a conductive channel made of n-type semiconductor material. The transistor can be turned on or off by the application of a voltage across the source and the gate. When the gate voltage is zero, the transistor is off or non-conductive; when it is applied, the transistor is on or conductive.

The HTMN5130SSD-13 also has high speed capabilities. The transistors switch quickly and can handle switching frequencies up to 20kHz. This makes it suitable for high speed control of current flow in circuits. The device also has a low on resistance, which helps minimize power losses. The device has a wide temperature range and can operate from -55°C to +175°C.

The HTMN5130SSD-13 is an efficient and reliable MOSFET array that can be used in a variety of applications. It is capable of controlling currents up to 180A and operating at voltages up to 600V. It has high speed capabilities and a low on resistance, making it suitable for use in a range of power applications. The device also has a wide temperature range and can be operated from -55°C to +175°C.

The specific data is subject to PDF, and the above content is for reference

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