IDT71016S12PHI Allicdata Electronics
Allicdata Part #:

IDT71016S12PHI-ND

Manufacturer Part#:

IDT71016S12PHI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IDT71016S12PHI datasheetIDT71016S12PHI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71016
Description

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Memory

The IDT71016S12PHI memory device is capable of providing an array of benefits for input/output systems. It is a high-density, low-power static random access memory (SRAM) device, with multiple configurations available to provide up to 32Kx16 bytes of memory, while still consuming a minimal amount of power. It has a wide range of applications, including aiding in providing additional bandwidth and support for various computing and digital communication tasks. This article will look at the application field and working principle of the IDT71016S12PHI memory device.

The IDT71016S12PHI can be employed in a number of application fields. It is particularly suited for use in high performance embedded systems, as it is capable of providing fast operation while consuming a low power budget. It is also beneficial as a cache memory for various computing systems, eliminating the delays that can be caused by slow access times to main memory systems. Additionally, it can be used in communication systems, aiding in the processing and transmission of digital data. It can also be used in the field of hand-held devices, due to its low power consumption. In each application field, the IDT71016S12PHI offers reliable, fast, and low-power operation.

The IDT71016S12PHI operates on a static RAM architecture. Each cell of the memory device is composed of a single transistor and a single capacitor. Due to its single transistor and capacitor construction, the IDT71016S12PHI can be operated in a write once, read many times mode. This makes it an ideal memory device for applications in which data must be written infrequently and read a great number of times without power cycling, such as in communication systems. In addition, due to its low power consumption and static operation, the IDT71016S12PHI can reduce the amount of heat generated in the system, making it a good choice for embedded systems and hand-held devices.

The IDT71016S12PHI operates on a read/write cycle basis. Data can be written to the memory device in byte-wide or word-wide read/write cycles. Read cycles are traditionally completed in one or two clock cycles, allowing for fast data retrieval. Additionally, the IDT71016S12PHI supports multiple bank support and access offset addresses, allowing for efficient data manipulation. Furthermore, the IDT71016S12PHI supports auto-refresh and data retention, eliminating the need for users to manually refresh the memory device in order to maintain the data.

The IDT71016S12PHI memory device is capable of providing a great array of benefits, allowing for fast and reliable data processing in a variety of application fields. Its high-density, low-power static RAM architecture allows for efficient data storage and retrieval, while providing a minimal amount of power consumption. Furthermore, its support for multiple bank support and access offset addresses, as well as auto-refresh and data retention, provide for an even more efficient data manipulation. Because of these benefits, the IDT71016S12PHI is well suited for use in high performance embedded systems, as well as in communication systems, hand-held devices, and other applications.

The specific data is subject to PDF, and the above content is for reference

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