IDT71V416VS15Y8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	15ns
Access Time:	15ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	44-SOJ
Base Part Number:	IDT71V416

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Introduction

IDT71V416VS15Y8 is a family of high-performance 16K x 16-bit Static RAMs with an asynchronous interface. It provides an efficient way to add additional memory to a variety of digital systems. The synchronous and asynchronous features offer multiple speed/application options for a wide range of applications. This family of static RAMs utilizes a variety of technologies to provide both high speed and low power consumption. This paper will discuss the application field and working principle of the IDT71V416VS15Y8.

Application Field

The IDT71V416VS15Y8 is an ideal choice for use in many different types of applications. These applications include:1. Telecommunications: It is capable of storing customer data and multiplexing customer traffic in a variety of system architectures.2. Embedded systems: The device is suitable for use in small form factor designs and can be used for code storage, scratch pad RAM and event storage.3. Aerospace: The device can be used for storing navigation data and storing data for mission-critical systems in aircraft and spacecraft.4. Automotive: High performance static RAMs are used in the automotive industry to store control data for engine and transmission control systems, as well as for storing data from in-vehicle cameras.

Working Principle

The IDT71V416VS15Y8 is a static random access memory (SRAM) device. SRAMs are widely used as fast working memories due to their fast response time, wide bandwidth and low power consumption compared to other types of memories. The IDT71V416VS15Y8 has an asynchronous interface and can operate at a frequency of up to 75MHz.The core of an SRAM is formed by a sequential circuit of memory cells that are connected in a cross-coupled configuration. This arrangement allows a single cell to store a single bit of information. The memory cells in the IDT71V416VS15Y8 consists of two transistors (a couple of MOSFETs arranged in a cross-coupled manner) and a single bit line. The transistors are responsible for storing the bit information and the bit line is used to read the bit from the memory cell.When a read or write operation is initiated, the control circuitry charges the bit line and the appropriate bit line is selected according to the address provided. When the bit line is charged, the data stored in the memory cell is either read or written. During a write operation, the control circuitry sets the appropriate bit line to a logic high or logic low value, thereby changing the data stored in the memory cell.

Conclusion

The IDT71V416VS15Y8 static RAM is designed to provide a wide range of applications with the fast response time, wide bandwidth and low power consumption that are characteristic of SRAM technology. It is suitable for use in a variety of applications, such as telecommunications, embedded systems, aerospace and automotive. The IDT71V416VS15Y8 utilizes a cross-coupled configuration of transistor pairs to store data and has an asynchronous interface that can operate at up to 75MHz.

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