IDT71V016SA20Y8 Allicdata Electronics
Allicdata Part #:

IDT71V016SA20Y8-ND

Manufacturer Part#:

IDT71V016SA20Y8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IDT71V016SA20Y8 datasheetIDT71V016SA20Y8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V016
Description

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IDT71V016SA20Y8 is a 16M x 8bit High-speed CMOS Static RAM, which belongs to Memory.

One of the most common uses for this type of RAM is for ROMP, ROMF, ROMS, ROMX, ROMA, ROMB and ROMK applications. ROMP refers to a project type, ROMF to a form type, ROMS to a program, ROMX to an executable, ROMA, ROMB and ROMK to data structures all of which come in the form of code.

Working Principle

IDT71V016SA20Y8 operates using a static technology that uses no clock and requires no refreshing. The device is internally organized as two banks of 128K x 8. There are two power logic pins, in addition to a write-enable pin, three Chip Selects and a Data In/Out pin.Data is written and retrieved from the RAM by accessing memory addresses and taking the data from the input and output pins. Address inputs determine which memory location is accessed, data is written or retrieved from that location.

This RAM is equipped with an advanced WRITE cycle. When coupled with the device’s short cycle time and limited cycle time, the WRITE cycle can be extended from Cycles Write to Burst Write mode. In this mode, the WRITE cycle remains the same, but multiple bursts of data will be accepted from the input pin.This RAM supports standard READ cycles as well as burst cycling. In burst cycling, a single address access can produce multiple word outputs. These multiple cycle types enable the device to operate with high bandwidth and reduce operating latency.

This RAM also includes an error detection code algorithm called "Serial Presence Detect". This ensures that any data read from the device is error-free. If any error is detected, an error flag is set and the data is not returned.Finally, IDT71V016SA20Y8 provides a Data Mask feature that can be used to mask certain words that contain sensitive information. Data Mask ensures that sensitive information is not made available to the external world.

Conclusion

In conclusion, IDT71V016SA20Y8 is a 16M x 8bit High-speed CMOS Static RAM, which is designed for ROMP, ROMF, ROMS, ROMX, ROMA, ROMB and ROMK projects. The device operates on a static technology with no clock and no refreshing and is organized as two banks of 128K x 8. With this RAM, data can be written and retrieved from memory addresses, and the WRITE cycle can be extended from Cycles Write to Burst Write mode. It also supports standard READ cycles as well as burst cycling, and provides functions such as Serial Presence Detect and Data Mask. Therefore, IDT71V016SA20Y8 is a great tool for Memory applications.

The specific data is subject to PDF, and the above content is for reference

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