IDT71P71604S200BQ8 Allicdata Electronics
Allicdata Part #:

IDT71P71604S200BQ8-ND

Manufacturer Part#:

IDT71P71604S200BQ8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 165CABGA
More Detail: SRAM - Synchronous, DDR II Memory IC 18Mb (512K x ...
DataSheet: IDT71P71604S200BQ8 datasheetIDT71P71604S200BQ8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71P71
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 7.88ns
Series: --
Clock Frequency: 200MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Synchronous, DDR II
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory is an essential component of any computing system, with different types providing different capabilities. The IDT71P71604S200BQ8 is a Synchronous SRAM device with a total storage capacity of 8M bits. It is a high-speed, low-power memory device with features that make it suitable for use in many applications. In this article, we will discuss the application field and working principle of the IDT71P71604S200BQ8.

IDT71P71604S200BQ8 Application Field

As mentioned, the IDT71P71604S200BQ8 is an 8M bit Synchronous SRAM device, which makes it suitable for use in a wide variety of applications. For example, it can be used for data storage in embedded systems, industrial and scientific applications, security and network applications, as well as for image and audio processing. It is also a good choice for high-performance applications such as gaming and communications. With a fast read/write speed of up to 100MHz and low power consumption, it is also suitable for mobile devices such as laptops and tablets.

IDT71P71604S200BQ8 Working Principle

The IDT71P71604S200BQ8 utilizes a synchronous type architecture for operation. In a synchronous system, output data is initiated in response to a clock signal, usually generated by an external circuit. The device has a number of components, including an internal control/address register, a bank of memory cells and an output register. The internal control/address register is used to store user-defined settings, while the memory cells are used to store data. The output register is used to receive data from the memory cells.

When a clock signal is received by the device, the internal address register is used to read the address of the data to be stored. This address is then sent to the memory cell, and the data stored in that location is then read and sent to the output register. The data is then sent back to the user via the output pins. This process repeats until all of the requested data has been processed.

Conclusion

The IDT71P71604S200BQ8 is an 8M bit, high-speed, low-power memory device that makes it suitable for use in many applications, including embedded systems, industrial and scientific applications, security and network applications, image and audio processing, as well as gaming and communications. Utilizing a synchronous architecture, the device allows for rapid reading and writing of data via an address register, a bank of memory cells and an output register. This makes the IDT71P71604S200BQ8 a valuable tool for many applications.

The specific data is subject to PDF, and the above content is for reference

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