IDT71V016SA20PHI

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	20ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	IDT71V016

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Introduction to IDT71V016SA20PHI

The IDT71V016SA20PHI is a 16-Mbit static random access memory (SRAM), which offers a high-speed fully synchronous memory interface. It is manufactured in a standard CMOS Ultra Low-Power process and can provide industry-leading low power and fast access speed. The IDT 71V016SA20PHI has several important features that make it the best choice for multiple applications.

Application Field of IDT 71V016SA20PHI

The IDT 71V016SA20PHI is used in a variety of fields. It is particularly useful in:

• High-performance computing applications such as servers, storage systems, and communication systems;
• Enterprise networks;
• Embedded systems and ASICs;
• Automotive and industrial applications.

Working Principle of IDT 71V016SA20PHI

The IDT 71V016SA20PHI is a high-speed static random access memory (SRAM) device. It uses an array of SRAM cells and associated circuits to store a large number of bits in a fixed physical location. The memory cells can be read and written rapidly, and they are non-volatile, meaning they retain their data even when power is removed.The IDT 71V016SA20PHI is a synchronous SRAM device, meaning that all of its operation is synchronized with a "clock" signal. This clock signal is used to synchronize the memory array, providing faster access and throughput. The device also contains a data buffer for improved performance, allowing for faster data transfer rates.

Conclusion

The IDT 71V016SA20PHI is a powerful, high-speed static random access memory device that is used in a variety of applications, from high-performance computing to embedded systems and automotive applications. Its synchronous operation and data buffer enable it to provide fast access speeds and better performance than other SRAM devices.

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