IDT71V25761YSA200BG Allicdata Electronics
Allicdata Part #:

IDT71V25761YSA200BG-ND

Manufacturer Part#:

IDT71V25761YSA200BG

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: IDT71V25761YSA200BG datasheetIDT71V25761YSA200BG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V25761
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 200MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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The IDT71V25761YSA200BG is a memory component classified as a register file device. The component provides true random-access memory (RAM) addressable 56kb of configuration registers. This component can be used in various applications, such as field-programmable gate arrays (FPGAs) and microcontrollers. This memory component is capable of storing data in the various registers, allowing for quick and reliable data access and data retrieval. Additionally, this component can also be used to store and retrieve information from memory locations.

The IDT71V25761YSA200BG component operates through three stages of operation. The first stage is the chip enable (CE1) and precharge cycles. This stage allows the memory component to receive the appropriate CE signals and to initialize the pin controllers for the subsequent processing of data. The second stage is the active time between the chip enable and the completion of each precharge cycle. This stage gives the component the opportunity to carry out the desired read and write operations that provided to the component. During this stage, the memory component will receive its appropriate address, data and control signals.

The third and final stage is the output enable and the evaluation cycles. This cycle allows the component to transfer data from internal registers to the outside world. In essence, the memory component will be ready to transmit the appropriate data as soon as the output enable signal is received. Furthermore, during this cycle, the component will also be able to transfer data between its internal registers, enabling for quick and reliable data transfers.

The IDT71V25761YSA200BG component is suitable for applications that require high performance random-access memory. This component can be used in applications that require multiple data addresses, such as memory access devices, high-end embedded controllers, processor-based systems, and memory management systems. Furthermore, this component can also be used as a system memory in applications such as servers, hard drives, and process controllers.

The IDT71V25761YSA200BG component has good reliability performance, making it suitable for high-end applications. The component is designed to conform to industry wide I/O standards, making sure that it integrates well with the existing system. Furthermore, the component is developed with an in-built protection mechanism so that it can run correctly in the various temperature and voltage environments.

In summary, the IDT71V25761YSA200BG memory component is capable of delivering remote access to multiple addressable locations. The component is highly reliable and has a proven track record of application success. This makes it suitable as a system memory of high-performance applications such as embedded controllers and memory management systems. The IDT71V25761YSA200BG component is a highly versatile and efficient memory solution.

The specific data is subject to PDF, and the above content is for reference

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