IDT71V3557SA80BQI8 Allicdata Electronics
Allicdata Part #:

IDT71V3557SA80BQI8-ND

Manufacturer Part#:

IDT71V3557SA80BQI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: IDT71V3557SA80BQI8 datasheetIDT71V3557SA80BQI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: --
Access Time: 8ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)
Base Part Number: IDT71V3557
Description

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Memory plays a significant role in our lives, from how people learn and understand to how computer processes and stores data. The IDT71V3557SA80BQI8 memory is a type of memory device that can store data for a long period of time and is designed to provide reliable performance and efficiency.

The IDT71V3557SA80BQI8 memory is a type of volatile memory technology, meaning that the data stored in this memory device will be erased when the power is turned off. This type of memory is often used in computers and is known as Dynamic Random Access Memory (DRAM). It is most commonly used as the main memory in computers, where it serves as a buffer between the CPU and the hard drive.

The IDT71V3557SA80BQI8 memory is composed of two main components: the DRAM itself and the controller. The DRAM contains multiple rows and columns of cells, each containing a bit of data. The controller manages the reading and writing of the data to the DRAM, as well as controlling the timing and order of data transfers. The controller also handles the refresh operations, allowing the DRAM to maintain its data integrity after the power is turned off.

The working principle of the IDT71V3557SA80BQI8 memory mainly relies on the electrical properties of capacitance. Every EMP cell in the memory consists of two transistors and a capacitor. Information is stored in the memory by charging the cell, which is done by making the capacitor\'s plate capacitance value represent the digital “1” or “0” information. This is done by sending electrons from the transistor gate. The controller is responsible for both the addressing and the write/read operations on the cells. In a write operation, a logic “1” will cause a charge to be written onto the cell and in a read operation, the state of the cell\'s plate capacitance will be used to determine whether it is a “1” or “0”.

The IDT71V3557SA80BQI8 memory is mainly used in computer systems and other electronic systems. It is used in modern computer systems as the main memory, providing a buffer between the CPU and hard drive. It is also used in game consoles, cell phones, tablets, digital cameras, and other portable electronic devices. It is fast, reliable, and consumes relatively low power, making it attractive to electronic manufacturers.

The IDT71V3557SA80BQI8 memory is a powerful, efficient, and reliable form of volatile memory technology. Its working principle mainly relies on the electrical properties of capacitance, and it is widely used in both computer systems and portable electronic devices. With its fast performance and low power consumption, the IDT71V3557SA80BQI8 memory is an excellent choice for storing data and improving the performance of modern computing systems.

The specific data is subject to PDF, and the above content is for reference

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