IDT71V35761YSA166BQI

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71V35761
Supplier Device Package:	165-CABGA (13x15)
Package / Case:	165-TBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	3.135 V ~ 3.465 V
Memory Interface:	Parallel
Access Time:	3.5ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	4.5Mb (128K x 36)
Technology:	SRAM - Synchronous
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction to IDT71V35761YSA166BQI Memory
IDT71V35761YSA166BQI Memory is a type of memory device used in a variety of applications. It is a two-way, asynchronous, low-power, low-leakage, self-timed semiconductor memory. It has a high data transfer rate of 333 MHz and is capable of handling up to 2Gb / sec of data transfer in parallel. The device has a 64-bit data port and is available in two versions: a full 64-bit version and a half-word version. It also features an on-chip, pluggable reference to improve accuracy and aid in operation over a temperature range of 85 °C to 165 °C.Application Field of IDT71V35761YSA166BQI Memory
The IDT71V35761YSA166BQI Memory is used in a variety of applications including, but not limited to, mobile computing, embedded systems, system-level caching, and high-speed memory modules. It is used extensively in high-end server, storage and networking systems. Additionally, the device is used in embedded industrial applications including: data collection, encoding and decoding, packet processing, and imaging applications. The device is also ideal for a range of uses and needs, including those that require extra storage capacity and those that require fast addressable memory. The device can be arranged in memory arrays of 8, 16, 32 and 64 bits and can provide up to 2GB/sec of access bandwidth. The device is capable of supporting a range of varying resistance values to match the application\'s system design and operating environment.Working Principle of IDT71V35761YSA166BQI Memory
The IDT71V35761YSA166BQI Memory is an asynchronous, low-power, low-leakage semiconductor memory device. The device is made up of a series of memory cells and access control circuits. The memory cells are arranged in a two-way fashion. There are two separate data paths for read and write operations, which are multiplexed at the terminals. The memory cells are read and written through a dedicated port. When the device is in an idle state, the device is in a two phase-selectable power mode where the power is automatically controlled through an on-chip, pluggable reference. The device also features several features and functions, such as write and read latencies, pre-charge and wait controls, power cycling, and on-chip programming logic to support various operation modes. The device also uses a fast reset algorithm with one reset click to ensure system stability and to maintain a low power consumption of the device. The device also offers built-in self-timing circuitry to eliminate the need for an external timing signal to ensure data accuracy and privacy. The on-chip address decoders and internal data paths are used to maintain data integrity and reduce power consumption.In addition to the built-in features, the device also offers error correction and detection features. The device is capable of detecting and correcting any type of data corruption during read or write operations. This helps to reduce system downtime and maintain data consistency.Conclusion
The IDT71V35761YSA166BQI Memory is a two-way, asynchronous, low-power, low-leakage, self-timed semiconductor memory device. It features a high data transfer rate of 333 MHz and is capable of handing up to 2Gb/sec of data transfer in parallel. It has a 64-bit data port and is available in two versions: a full 64-bit version and a half-word version. The device is used in a variety of applications including, but not limited to, mobile computing, embedded systems, system-level caching, and high-speed memory modules. It is an ideal device for applications that need extra storage capacity and those that require fast addressable memory. The device also offers built-in error correction and detection features to help reduce system downtime and maintain data consistency.

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