IDT71V416VL10PH

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	IDT71V416

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IDT71V416VL10PH is a type of memory device designed as a solution for data storage and management. It is typically used in combination with other memory devices to provide storage capacity for data that would otherwise be too large or too complex to store using other traditional storage devices. In terms of its application field, IDT71V416VL10PH is typically used in industries that require high-density data storage in a reliable, efficient, and cost-effective manner. Examples of such industries are automotive, aerospace, medical, and gaming applications. In these industries, IDT71V416VL10PH can be integrated into a variety of applications, including embedded systems, computer systems, and data centers. In each of these applications, the memory device is applied to enhance the reliability, efficiency, and cost-effectiveness of the overall solution. In terms of the working principle of IDT71V416VL10PH, the device is designed to operate using non-volatile memory (NVM) technology. This technology is based on a combination of NAND flash cells and capacitors to provide both high-density data storage and reliable data retention. Specifically, the device stores data in a memory NAND matrix that is organized in cells, which are then connected to a dedicated controller chip. This controller chip functions as a dual-level system, allowing for efficient writing and reading of data from and to the NAND matrix. Additionally, the controller chip ensures that the data is consistent and protected against corruption or destruction due to accidental or environmental causes. To protect against this, the controller chip includes a dedicated ECC engine that can detect and correct potential data errors that may occur while writing or reading data from the NAND matrix. This ensures that the data stored by the device remains reliable and accurate. In terms of performance, the IDT71V416VL10PH utilizes a Random Access Memory (RAM) buffer to facilitate fast read and write access to the NAND matrix. This ensures that data can be reliably read and written in a timely manner, thus allowing for faster response times in applications that require fast read/write access to large volumes of data. In conclusion, the IDT71V416VL10PH provides a reliable and efficient solution for data storage and management in a variety of applications. Through its use of NVM technology and fast read/write speeds, the device is able to provide cost-effective and reliable data storage and management solutions to a variety of industries, including automotive, aerospace, medical, and gaming applications.

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