IDT71V416VL12BE8 Allicdata Electronics
Allicdata Part #:

IDT71V416VL12BE8-ND

Manufacturer Part#:

IDT71V416VL12BE8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 48CABGA
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416VL12BE8 datasheetIDT71V416VL12BE8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)
Base Part Number: IDT71V416
Description

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IDT71V416VL12BE8 is a type of memory with very low power consumption. It is manufactured by IDT, a company that specializes in the design and manufacture of Memory. This type of Memory is often used in a wide range of applications, such as industrial automation, communication, storage, and embedded systems. The device has a Total Access Time of 10ns and supports a maximum speed of 25Mb/s. It also features a Low Power Mode, which allows the device to operate with minimal energy consumption.

In industrial automation, IDT71V416VL12BE8 Memory is often used in memory controllers or integrated circuits. The high performance and low power consumption of this type of Memory make it suitable for applications where memory requirements are high. It is also used to boost performance and reliability in communication systems. Furthermore, IDT71V416VL12BE8 Memory is often used in embedded systems for storage purposes, such as for storing medical images and for storing data from machines.

The working principle of IDT71V416VL12BE8 Memory is very simple. It stores data in an array of memory cells. Each cell can accommodate a bit of data. When a program needs to read or write data, it requests the data from the memory cells. The device then retrieves the data using its Internal Address Bus, and then transmits it back to the requesting program.

The memory cells of IDT71V416VL12BE8 can store up to 8 bits per cell. This is done by using four data lines and four address lines. The four data lines are used to write data to the cells, and the four address lines are used to read the data. Additionally, the device has its own programming circuitry, which can be used to pre-program the cells with predefined data. This greatly reduces the time required for programming and makes the device suitable for use in applications where data must be frequently updated.

The IDT71V416VL12BE8 also features asynchronous access, which allows the device to respond quickly to requests from the processor. Additionally, the device is optimized for performance in order to minimize latency and power consumption. Furthermore, the device is designed with Error Correction Code (ECC) to ensure data integrity.

In conclusion, IDT71V416VL12BE8 is a type of Memory designed for use in a wide range of applications. It has low power consumption and excellent performance, making it suitable for industrial automation, communication, storage, and embedded systems. Additionally, it has its own programming circuitry and features error correction code to ensure data integrity. As such, this type of Memory is suitable for use in mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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