IDT71V416VS10PHI8 Allicdata Electronics
Allicdata Part #:

IDT71V416VS10PHI8-ND

Manufacturer Part#:

IDT71V416VS10PHI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416VS10PHI8 datasheetIDT71V416VS10PHI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V416
Description

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IDT71V416VS10PHI8 is a single 4M-bit, CMOS SRAM for use in a variety of applications and systems. The IDT71V416VS10PHI8 features an auto-precharge feature that allows the timing of read and write operations within the same cycle. This feature allows for more powerful and reliable applications such as network switching, server and desktop systems and gaming consoles.

The IDT71V416VS10PHI8 can be classified as memory due to its large capacity and high speed read and write capabilities. It also has a low latency between write and read operations. This makes it suitable for applications that require fast access to data, such as video game systems and video streaming.

The IDT71V416VS10PHI8 uses a combination of SRAM and DRAM technologies to provide a fast and reliable solution for embedded systems. The SRAM provides random access and high speed operation, while DRAM provides strong, error-free data storage. Both technologies are integrated into the device to provide a reliable and efficient interface for data storage and retrieval.

The IDT71V416VS10PHI8 also features an error-correcting code (ECC) generation circuit. This circuit detects and corrects single-bit errors in the SRAM and DRAM components. This feature prevents data corruption, ensuring reliable data storage and retrieval.

The IDT71V416VS10PHI8 also incorporates several design features to reduce power consumption. It includes an optimized system architecture, which results in higher clock speeds, lower current draw, and increased system performance with lower overall energy consumption. It also includes a low power sleep mode, allowing the device to consume nearly zero power when not in use.

In terms of performance, the IDT71V416VS10PHI8 boasts a fast access time of 12 ns. This means the device can respond to commands quickly, which is essential for applications that require intensive data processing, such as video streaming and gaming. The device also features an input-output buffer that provides additional protection for data during transmission.

In addition, the device offers two different types of interface connections: UCM and SMI. UCM provides a fast and low-power connection to a wide range of interface devices, while SMI is optimized for high-speed data communications. For example, the SMI connection can be used to connect to a network.

Overall, the IDT71V416VS10PHI8 is a reliable and efficient memory solution for embedded systems. It offers fast access time, low power consumption, and an ECC generation circuit for reliable data storage and retrieval. The two types of interface connections provide a fast connection for multiple devices, and the optimized architecture enables higher clock speeds for increased system performance.

The specific data is subject to PDF, and the above content is for reference

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