IDT71V416YL12PHI Allicdata Electronics
Allicdata Part #:

IDT71V416YL12PHI-ND

Manufacturer Part#:

IDT71V416YL12PHI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416YL12PHI datasheetIDT71V416YL12PHI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V416
Description

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Introduction

IDT71V416YL12PHI is an integrated memory solution designed specifically for applications with memory needs. It is a high-density memory product that provides eight banks of eight 64K-bit static random access memories (SRAMs). The device features integrated errata correctors, power down modes, onboard priority encoders, and various on chip control logic. This device is designed to deliver fast performance, low latency and low power consumption.

Application Field

IDT71V416YL12PHI is primarily targeted for use as embedded memory in consumer electronic, medical, industrial and military/aerospace markets. It is suitable for use in systems requiring reliable, robust and power efficient memory solutions. It can also be used for general-purpose memory in applications such as audio / video processing, image processing, data acquisition, data storage, networking and communications.

Working Principle

The device consists of 8 banks of 8 dynamic random access memories (DRAMs) that can be configured to either read or write. The individual memory banks are configured through a set of control registers. Each memory bank has an associated priority encoder that is used to select the active bank. The priority encoder keeps track of the active and inactive banks and ensures that only one bank is active at any given time.

The active bank is accessed through the data bus. Data is written to or read from the active bank by sending read/write commands to the appropriate address. Data stored in an individual memory bank is accessed through a 16-bit data port.

The device features built-in error-correcting circuitry, which is designed to correct any single-bit errors in the stored data. In addition, the device also supports power down modes to reduce power consumption when inactive.

Conclusion

In conclusion, IDT71V416YL12PHI is a high-performance, low-power static random access memory solution designed primarily for use in embedded systems applications. It features integrated errata correctors, power down modes, and priority encoders to ensure efficient operation. This product is suitable for use in a variety of applications and is ideal for applications where reliable, robust and power-efficient memory solutions are required.

The specific data is subject to PDF, and the above content is for reference

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