IDT71V424S12PHI8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	12ns
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	IDT71V424

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Introduction

IDT71V424S12PHI8, developed by Integrated Device Technology or IDT, is a four-megabyte Static Random Access Memory (SRAM) designed for high performance applications. This SRAM is available in two industry standard packages, dual in-line package (DIP) and SOIC (Small Outline Integrated) package. It is fully compatible with JEDEC standards and is rated for operation at temperatures between 0 and 70 degrees Celsius. Its unique design supports up to 12-clock cycles with differential clock inputs, allowing for faster operation than is achievable with conventional static RAM devices.

Application Field

IDT71V424S12PHI8 is a component used in many electronic systems and applications, including high speed memory systems, FPGAs (Field Programmable Gate Arrays), ASICs (Application Specific Integrated Circuits) and board-level applications. It is designed to deliver high performance and reliability, with minimal power consumption. This component offers features such as low power consumption and differential clock inputs, making it an ideal solution for cost-sensitive and high data rate applications. It can be used in embedded applications such as automotive, medical, and consumer electronics, as well as in industrial and military applications.

Working Principle

The working principle of the IDT71V424S12PHI8 is based on its four-megabyte Static Random Access Memory, or SRAM. It features 1,048,568 bits of memory organized into 131,072-word arrays. This component offers a maximum access time of 12-clock cycles, and its unique architecture supports differential clock inputs that allow up to 250MHz clock rates. Each word consists of four bytes and can operate in byte, half-word, and word modes. On power-up, the memory is cleared and ready to operate.In order to read data from the SRAM, the address lines are setup to the desired address and the Data Out signal is taken from the Data Out pin. To write data to the SRAM, the address lines are setup to the desired address and the Data In signal is provided on the Data In pin. The Write Enable pin must be asserted to enable the write cycle.

Conclusion

IDT71V424S12PHI8 is a powerful, reliable and low-power SRAM component designed for high performance applications. It features a fast access time (12-clock cycles) and differential clock inputs, making it ideal for high data rate applications. It is suitable for a variety of applications, including automotive, medical, consumer electronics, industrial and military. It is also fully compatible with JEDEC standards and is rated for operation at 0-70 C temperatures.

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