IDT71V424YL10PHI8 Allicdata Electronics
Allicdata Part #:

IDT71V424YL10PHI8-ND

Manufacturer Part#:

IDT71V424YL10PHI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: IDT71V424YL10PHI8 datasheetIDT71V424YL10PHI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V424
Description

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Memory

IDT71V424YL10PHI8 Application Field and Working Principle

The IDT71V424YL10PHI8 is an FPGA-friendly dual port static RAM with 10Mb capacity, composed of one million four-bit words. It is an ideal memory solution for applications that require high performance, configurability, and long battery life. This memory is capable of operating in temperature ranges from -40 to +85 degrees Celsius, making it suitable for a wide range of applications.

The IDT71V424YL10PHI8 is a four-bank memory. Each bank contains eight 16kwords, offering a total of 64kwords of memory in each port. The device features a 100MHz clock rate and access times of 4ns. This makes it particularly well suited for applications that demand fast, reliable data processing. The device also features Triple Data Rate (TDR) technology that allows successive read and write operations at two data words per clock cycle, thus allowing for increased throughput.

The device offers several data protection features, including hardware and software Error Checking and Correcting (ECC) for single- and multi-bit errors. It also supports parity protection for error detection and correction of single-bit errors, as well as supplemental parity protection for independent ECC encoding and decoding. Additionally, take-off support allows a write operation to be interrupted to allow for long-term refreshes, eliminating the need for dedicated memory refresh circuitry.

The IDT71V424YL10PHI8 also offers fast data streaming capabilities that allow rapid transfers and complex data manipulation between memory blocks. This makes it particularly well suited for systems that require data streaming, such as digital signal processing and medical imaging. Additionally, the device features an advanced pipeline write and read interface, allowing for fast pipelining of data. This makes the device suitable for applications needing high throughput, such as high-performance computing and telecom systems.

In addition to these features, the IDT71V424YL10PHI8 offers several low-power consumption features, allowing it to be used in applications that require low-power consumption, such as mobile and battery-operated devices. The device features an advanced power-saving mode, which reduces power consumption to less than 10mA in standby mode. Additionally, the device consumes only 40mA when fully active, meaning that it can operate for long periods of time with very low power consumption.

Overall, the IDT71V424YL10PHI8 is an ideal memory solution for a wide range of applications, from low-power mobile devices to high-performance computing and telecom systems. Its advanced features, such as TDR and pipeline interfaces, provide fast performance, while its low-power consumption features make it suitable for battery-operated applications.

The specific data is subject to PDF, and the above content is for reference

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