IDT71V67602S150BQI

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71V67602
Supplier Device Package:	165-CABGA (13x15)
Package / Case:	165-TBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	3.135 V ~ 3.465 V
Memory Interface:	Parallel
Access Time:	3.8ns
Series:	--
Clock Frequency:	150MHz
Memory Size:	9Mb (256K x 36)
Technology:	SRAM - Synchronous
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction

IDT71V67602S150BQI is a type of memory device designed to fit a variety of applications. It is a high-speed DRAM memory based on CMOS process that is suitable for multiport applications. The device encapsulates a 64Mbit memory, which offers a 10ns access speed. The device can be used in a variety of applications, ranging from mobile phones and smart TVs to laptop computers. In this article, we will discuss the application fields and working principle of IDT71V67602S150BQI memory.

Application Fields

IDT71V67602S150BQI memory device is suitable for a variety of applications requiring high-speed data access and storage. It is particularly suited for multimedia applications such as video streaming, digital television, video conferencing, gaming, and video editing. It is also used in advanced network applications such as Gigabit Ethernet and Infiniband.Another popular application field of IDT71V67602S150BQI is the Automotive industry, where it is used for navigation, telematics and collision avoidance systems. The device is also suitable for aerospace and defense applications. It is used in advanced image processing and radar tracking systems.

Working Principle

IDT71V67602S150BQI memory is a type of Dynamic Random Access Memory (DRAM). It is based on CMOS process and uses a 64Mbit memory technology.Every cell in a DRAM can store a single bit of data, which gives the device a total of 8 million memory locations.DRAM memory works by applying a voltage to the memory cell. When the voltage is applied, the stored data is accessed and can be either read or written. To write data to the cell, the voltage is changed. The whole process is controlled by a set of transistors and capacitors that act as a switch within the memory cell.Unlike other memory types, DRAM does not retain its contents when the system is powered off. This means that the data must be constantly refreshed to prevent it from being lost. To achieve this, the memory controller continuously sends refresh signals to the memory.

Conclusion

IDT71V67602S150BQI is a type of DRAM memory device designed for a variety of applications requiring high data access speeds. It is suitable for applications such as video streaming and digital television, as well as automotive and aerospace applications. The device is based on CMOS process and uses a 64Mbit memory technology with a 10ns access time. The data stored in the device needs to be constantly refreshed to prevent it from being lost.

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