IDT72T20118L4BB Allicdata Electronics
Allicdata Part #:

IDT72T20118L4BB-ND

Manufacturer Part#:

IDT72T20118L4BB

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC FIFO 65536X20 4NS 208BGA
More Detail: N/A
DataSheet: IDT72T20118L4BB datasheetIDT72T20118L4BB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Bus Directional: Uni-Directional
Base Part Number: 72T20118
Supplier Device Package: 208-PBGA (17x17)
Package / Case: 208-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
FWFT Support: Yes
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Series: 72T
Current - Supply (Max): 60mA
Voltage - Supply: 2.375V ~ 2.625V
Access Time: 3.2ns
Data Rate: 250MHz
Function: Synchronous
Memory Size: 2.5M (128K x 20)(256K x 10)
Part Status: Obsolete
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IDT72T20118L4BB Memory

IDT72T20118L4BB, also known as a Fast-Page Mode (FPM) DRAM, is a type of Random Access Memory (RAM) chip used in memory modules, storage devices and other electronic applications. It was developed by Integrated Device Technology (IDT) and introduced in the late 1980s as a replacement to the earlier Page Mode DRAMs. FPM DRAMs are categorized under the Logic - FIFOs memory group and are identifiable by their distinctive 18.4mm package size.

Application Field and Working Principle

IDT72T20118L4BB FPM DRAMs are used in a wide range of consumer and industrial devices and applications. They are commonly used in computer hardware such as motherboards, graphic cards, and servers; in automotive, embedded and military systems; in satellite and aerospace engineering; and in medical electronics.The working principle of FPM DRAM is based on a Burst Read/Write memory architecture. As the name implies, this type of RAM allows multiple successive read and write operations of the same data. In a Burst Read/Write cycle, the first operation is a read operation followed by up to 8 successive read or write operations. This allows FPM DRAMs to achieve significantly higher data transfer speeds compared to standard DRAMs. Moreover, FPM DRAMs also have built-in refresh mechanisms which allow the RAM to be refreshed or rewritten on a regular basis. This feature is particularly useful in applications where high performance and reliability are essential, as it ensures that no data is lost when the RAM is subject to long-term data storage.

Advantages of IDT72T20118L4BB FPM DRAM

The most significant advantage of using IDT72T20118L4BB FPM DRAMs is the improved speed of data transfer. As a result, applications which require rapid data transfer, such as those used in gaming systems, can benefit from using FPM DRAMs in their hardware.Another advantage is the fact that FPM DRAMs use less power compared to standard DRAMs. This means that applications which rely on battery power, such as laptops and mobile devices, can benefit from using FPM DRAMs since they will require less energy to operate.Finally, the built-in refresh mechanism in FPM DRAMs makes them ideal for applications which require long-term data storage and which may be subject to environmental or physical stressors. This ensures that stored data is not lost in the event of a power loss or other unforseen event.

Conclusion

IDT72T20118L4BB FPM DRAM is a type of Random Access Memory chip used in memory modules, storage devices and other electronic applications. It belongs to the Logic - FIFOs Memory group and is recognizable by its distinctive 18.4mm package size. FPM DRAMs are used in a variety of consumer, industry, military and medical applications and offer the advantages of improved data transfer speeds, lower power consumption and built-in refresh mechanisms.

The specific data is subject to PDF, and the above content is for reference

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