Allicdata Part #: | IDW20C65D2XKSA1-ND |
Manufacturer Part#: |
IDW20C65D2XKSA1 |
Price: | $ 2.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE 650V 20A RAPID2 TO247-3 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 650V 10... |
DataSheet: | IDW20C65D2XKSA1 Datasheet/PDF |
Quantity: | 45 |
1 +: | $ 1.84590 |
10 +: | $ 1.65627 |
Series: | Rapid 2 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 2.2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 40µA @ 650V |
Operating Temperature - Junction: | -40°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
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The IDW20C65D2XKSA1 is a diode rectifier array designed for high-speed switching and phase control applications. It is a multi-phase synchronous rectifier array, featuring one phase for every two channel rectifier, allowing for simultaneous power conversion with minimal switching noise. The IDW20C65D2XKSA1 is a high-quality, integrated diode rectifier array that provides ultra-fast switching at moderate forward and reverse voltages, while greatly reducing the capacitance associated with discrete components. This makes it an ideal solution for high-speed power switch designs and phase control applications such as motor control, circuit protection and battery charging.
The IDW20C65D2XKSA1 is a single-phase, 8 pin, Silicon-on-Insulator (SOI) diode rectifier array. It provides a highly efficient and cost-effective solution to diode rectifier bridge application designs. The device has an operating voltage range of 4.5V to 80V and a working frequency of 50kHz to 5MHz. Due to the wide range of input voltages, the device is suitable for multiple applications, making it a suitable option for a variety of projects.
The working principle of the IDW20C65D2XKSA1 is similar to that of standard diodes. It consists of one p-channel and one n-channel MOSFET, connected in parallel and in a symmetrical "bridge" configuration. The p-channel MOSFET serves as the input of the rectifier and the n-channel MOSFET serves as the output. When forward biased, the p-channel MOSFET sources current and the n-channel MOSFET sinks current, providing the required conduction path. In reverse biased, the reverse recovery of both MOSFETs allows for minimal losses and higher efficiency. With a strong input/output isolation, the IDW20C65D2XKSA1 ensures low power losses during device switching.
To ensure reliable operation, the IDW20C65D2XKSA1 is designed to include a self-limiting gate drive circuit and an ESD-protection circuit. The self-limiting gate drive circuit prevents excessive gate voltage from damaging the MOSFETs, while the ESD-protection circuit protects the integrated circuits from electrostatic discharge. This ensures stable and reliable operation in extreme conditions.
In summary, the IDW20C65D2XKSA1 is a highly integrated diode rectifier array for high-speed switching and phase control applications. Its efficient power conversion and low power losses make it an ideal solution for motor control, circuit protection and battery charging applications. Its robust gate drive and ESD-protection circuits ensure reliable operation under extreme conditions, making it a reliable and cost-effective solution for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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