IDW20S120FKSA1

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The IDW20S120FKSA1 rectifier array, introduced by Infineon Technologies AG, is an electronic device, which offers even greater efficiency in hard switching applications, improving the circuit’s overall power performance.

The IDW20S120FKSA1 is a Dual Common Cathode Diode, an array of 2 double-diffused metal-oxide semiconductor (DMOS) Schottky barrier rectifiers. Built on a silicon substrate and fabricated with Infineon’s lead-free proprietary process, the rectifier family is designed to cope with high power levels and high ambient temperatures, thereby reducing total system cost.

Due to its dual common cathode and low forward voltage, the IDW20S120FKSA1 is suitable for handling applications with high levels of current, for example, 12V automotive loads, where power losses are an important consideration. Combining superior thermal performance and temperature stability, these devices operate with peak operating junction temperature of 175°C. Furthermore, the low dynamic resistance values of these rectifiers guarantee low voltage drop and low EMI generation.

In terms of functionality, the IDW20S120FKSA1 works through the use of a field-effect transistor (MOSFET), to allow the voltage level switching between high or low values. The MOSFET functions by controlling the reaction of the electric field when electrons are injected into the gate. Consequently, when operating in a low or high on-state current, the FET maintains the voltage. This allows the IDW20S120FKSA1 to provide low voltage drop and low EMI generation at higher frequencies and enable power switching with minimal power loss.

The IDW20S120FKSA1 rectifier array is an excellent choice for automotive loads, as well as other switching applications. Its versatile design enables it to manage a wide range of voltages and currents, making it a reliable, low-cost solution for a variety of applications. The IDW20S120FKSA1 offers superior thermal-performance and temperature stability, enabling it to perform in a wide range of environments.

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