| Allicdata Part #: | IGW100N60H3FKSA1-ND |
| Manufacturer Part#: |
IGW100N60H3FKSA1 |
| Price: | $ 3.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 140A TO247-3 |
| More Detail: | IGBT Trench Field Stop 600V 140A 714W Through Hole... |
| DataSheet: |  IGW100N60H3FKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 240 +: | $ 3.52288 |
| Power - Max: | 714W |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Test Condition: | 400V, 100A, 3.5 Ohm, 15V |
| Td (on/off) @ 25°C: | 30ns/265ns |
| Gate Charge: | 625nC |
| Input Type: | Standard |
| Switching Energy: | 3.7mJ (on), 1.9mJ (off) |
| Series: | TrenchStop™ |
| Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 100A |
| Current - Collector Pulsed (Icm): | 300A |
| Current - Collector (Ic) (Max): | 140A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The IGW100N60H3FKSA1 Single IGBT from Infineon Technologies is an insulated gate bipolar transistor designed for motor control and power conversion applications. The device has an EFT of 400V, a maximum collector-emitter voltage of 600V and a collector current rating of 100A. The IGW100N60H3FKSA1 is RoHS compliant and is suitable for use in high-power switching, automotive and lighting applications.
IGBTs (Insulated Gate Bipolar Transistors) are hybrid components that combine the properties of a MOSFET and a bipolar transistor. They are used to control high-current, high-voltage switching applications. The main advantage of the IGBT is its high switching power efficiency, making them a popular choice for power conversion and motor control applications.
The IGW100N60H3FKSA1 works by using a voltage applied to the Gate-Emitter to control the flow of current from the Collector to the Emitter. The IGBT also has an internal body diode which is used for inductive switching applications. In addition, the IGW100N60H3FKSA1 offers fast switch-off and low turn-on losses which increases the overall efficiency and performance.
The IGW100N60H3FKSA1 is an ideal choice for automotive lighting and power conversion applications. The device features fast switching speed, low losses and high power efficiency in a rugged and reliable package. In addition, the IGW100N60H3FKSA1 is RoHS compliant, making it safe and reliable for use in applications that require RoHS compliance.
In conclusion, the IGW100N60H3FKSA1 is an excellent choice for a wide range of motor control and power conversion applications. Thanks to its high switching power efficiency, fast switching speed and low losses, the IGW100N60H3FKSA1 is a reliable and cost-effective choice for automotive lighting and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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