Power - Max:	217W
Supplier Device Package:	PG-TO247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	600V, 15A, 35 Ohm, 15V
Td (on/off) @ 25°C:	21ns/260ns
Gate Charge:	75nC
Input Type:	Standard
Switching Energy:	1.55mJ
Series:	TrenchStop®
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 15A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	30A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IGW15N120H3FKSA1 is a single IGBT that is applied mostly in power semiconductor applications. This type of IGBT is a high speed switch, which is able to switch current at the high rate of 15,000 amperes. This type of IGBT is specifically designed to be applied in medium to high voltage applications, such as power converters, class D audio amplifiers, automotive inverters and drives, industrial motor control, and solar applications. The IGW15N120H3FKSA1 is composed of an Emitter Cell, Collector Cell, and Gate Driver assembly that all together form a robust IGBT with unparalleled performance.

Features and Benefits

The IGW15N120H3FKSA1 IGBT has many features and benefits that make it ideal for various power semiconductor applications. One of the main features is its high speed of 15,000 amperes which is a great benefit for high voltage applications that require high current. It also features low power loss and low thermal resistance, making it ideal for high power applications. Another feature of this IGBT is its high current density, which allows for high power densities and efficient operations within compact packages. Finally, it has a robust gate drive which provides excellent protection against false triggering and enhances its reliability in operation.

IGW15N120H3FKSA1 Application Fields and Working Principle

The IGW15N120H3FKSA1 IGBT is widely used in high voltage applications, such as power converters, class D audio amplifiers, automotive inverters, and industrial motor control. It is most commonly used as a switch in these applications, as it is able to switch highs speeds and high currents while providing high reliability and easy installation in an efficient and safe manner. The IGW15N120H3FKSA1 is also widely used in solar applications, as the power it provides is ideal for efficient production of energy.The working principle of the IGW15N120H3FKSA1 is quite simple. It is composed of two vertically opposed, two-layer silicon cells that are connected in series and operate at a high frequency. The Emitter Cell is connected to a voltage source and acts as the main switching element. The Collector Cell is connected to an external load, and acts as the terminal for the current flow. When the Gate Driver is activated, the Emitter Cell increases its voltage, allowing current to flow from the Emitter Cell to the Collector Cell and the external load, completing the switching operation.

Conclusion

In conclusion, the IGW15N120H3FKSA1 is a high speed switch specifically designed for high voltage applications. It is composed of an Emitter Cell, Collector Cell, and Gate Driver assembly and offers many features and benefits. This IGBT is highly versatile, as it can be used in numerous applications, such as power converters, class D audio amplifiers, automotive inverters and drives, industrial motor control, and solar applications. Moreover, its low power loss, low thermal resistance, and high current density makes it ideal for high power applications. Finally, its robust gate drive ensures reliable operation and false triggering protection.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description