IGW15T120FKSA1

Series:	TrenchStop®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	30A
Current - Collector Pulsed (Icm):	45A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 15A
Power - Max:	110W
Switching Energy:	2.7mJ
Input Type:	Standard
Gate Charge:	85nC
Td (on/off) @ 25°C:	50ns/520ns
Test Condition:	600V, 15A, 56 Ohm, 15V
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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Introduction

IGW15T120FKSA1 is a driver-controlled, single-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-switching frequency, high voltage and high current applications. Because of its highly efficient design, it can be used in a wide range of applications and helps to reduce design complexities and improve system performance. In this article, we will discuss the general application field of IGW15T120FKSA1, as well as its working principle.

Application Field

The IGW15T120FKSA1 was designed for low power, high voltage and high switching frequencies applications. It can be used in battery-operated equipment, such as portable medical and industrial devices, as well as in high power, high voltage automotive applications, like traction and control systems. As it has a high switching frequency and low switching losses, it can be used in the design of power converters, including boost, buck, flyback converters, DC-DC converters, etc.

Working Principle

The basic working principle of an IGBT is similar to an MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). The IGBT is composed of an emitter and a collector and a gate terminal that is used to control the conduction of current between the emitter and the collector. In the IGW15T120FKSA1, the gate terminal is controlled by a driver connected to GATE, ENABLE and IREF (sampled from REF pin). The IREF input divides the external feedback resistor in order to control the driver power stage output and stabilizes the voltage on the gate. When the ENABLE input is high and the GATE is positive (with respect to EMITTER), the IGW15T120FKSA1 is in the on-state, allowing current to flow between the collector and the emitter. When the user sets the ENABLE to low, the gate terminal is unilaterally gate to reverse breakdown, turning the IGW15T120FKSA1 off. When two or three IGW15T120FKSA1s are arranged in an anti-parallel configuration and their Enable pins are connected in parallel, then the resulting device is called a Reverse Conducting IGBT (RC-IGBT). The IGW15T120FKSA1\'s low power, high voltage, and low switching losses make it an ideal device for applications with high frequency and current, such as portable medical and industrial applications, as well as automotive applications.

Conclusion

In conclusion, the IGW15T120FKSA1 is a driver-controlled single-channel IGBT designed for low power, high voltage and high current applications. It is ideal for applications with high switching frequencies and low switching losses, such as portable medical and industrial devices, as well as high power, high voltage automotive applications. Its working principle is similar to an MOSFET, with the gate terminal being controlled by a driver connected to GATE, ENABLE and IREF.

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