IGW20N60H3FKSA1

Transistors - IGBTs - Single

The IGBT (insulated gate bipolar transistor) combines the advantages of both a bipolar transistor and a MOSFET into a single device that has excellent switching characteristics and high blocking voltage. IGBTs are popular because they offer excellent performance characteristics when compared to other transistor technologies. The 20N60H3FKSA1 IGBT is a high frequency, high speed IGBT capable of excellent switching performance with an efficiency of up to 85%.

IGW20N60H3FKSA1 application field

The 20N60H3FKSA1 IGBT is ideally suited for a wide range of industrial and commercial applications such as inverters, uninterruptible power supplies (UPSs), motor controllers, UPSs, and power transmission systems. IGBTs are well known for their high switching speeds, low losses, and high current densities, making them popular for a wide range of applications.

In addition, the 20N60H3FKSA1 IGBT can be used as a low-voltage switch for applications where a low on resistance is necessary but where a high switching speed is also essential. They can also be used as a low-voltage switch in audio-signal-switching applications due to their high switching speed and low on-resistance.

Finally, IGBTs are also well suited for use in high reliability applications, such as wind turbines and solar power systems, due to their high reliability and high current density.

IGW20N60H3FKSA1 working principle

The 20N60H3FKSA1 IGBT is a three-terminal device that utilizes the principles of both a bipolar transistor and a MOSFET to achieve excellent performance characteristics. The IGBT has an insulated gate that is connected one E-S-G source terminal. The E-S-G source terminal is the input terminal, while the collector and emitter are the output terminals.

When a positive gate voltage is applied to the insulated gate, the device switches on, allowing current to flow between the collector and emitter terminals. When a negative gate voltage is applied, the device switches off, preventing current from flowing between the collector and emitter. The insulated gate can be used to both turn on and turn off the device by controlling the voltage applied to it.

The 20N60H3FKSA1 IGBT can be used in either switching or linear applications due to its excellent switching characteristics. Due to its high efficiency and low gate current, the IGBT can be used in energy-efficient applications with minimal heat losses. It is also capable of operating at high frequencies, making it ideal for use in high-speed switching and modulation applications.

In conclusion, the 20N60H3FKSA1 IGBT is an ideal device for a variety of industrial and commercial applications. It offers excellent switching characteristics with high current densities, low gate current, and high switching speeds. It can also be used for linear applications and energy-efficient applications due to its excellent performance characteristics.