IGW25T120FKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGW25T120FKSA1-ND |
Manufacturer Part#: |
IGW25T120FKSA1 |
Price: | $ 2.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 50A 190W TO247-3 |
More Detail: | IGBT NPT, Trench Field Stop 1200V 50A 190W Through... |
DataSheet: | IGW25T120FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.62080 |
10 +: | $ 2.35368 |
100 +: | $ 1.92843 |
500 +: | $ 1.64164 |
1000 +: | $ 1.38452 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT, Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Current - Collector Pulsed (Icm): | 75A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 25A |
Power - Max: | 190W |
Switching Energy: | 4.2mJ |
Input Type: | Standard |
Gate Charge: | 155nC |
Td (on/off) @ 25°C: | 50ns/560ns |
Test Condition: | 600V, 25A, 22 Ohm, 15V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
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Igw25t120fksa1 is a type of IGBT (Insulated Gate Bipolar Transistor). IGBTs are a type of transistor that combines the elements of both a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a BJT (Bipolar Junction Transistor). IGBTs typically feature a higher gain and can handle higher current and voltage than conventional transistors, which makes them suitable for many applications.
IGW25T120FKSA1 is a single IGBT with a current rating of 25A and a voltage rating of 1200V. It is designed to be used in a variety of applications, such as motor drives and inverters, as well as general-purpose switching and power conversion. The device features a low on-state resistance rating and a low drive power requirement, making it suitable for high-efficiency application.
The working principle of IGW25T120FKSA1 is similar to that of other IGBTs. When a low voltage is applied to the gate of the IGBT, it becomes polarized, allowing current to flow from the collector to the emitter. Conversely, when a high voltage is applied to the gate, the IGBT becomes non-polarized, and the current is blocked from flowing. This simple on/off action is used in a variety of applications, from low-power electronics to high-power motor control.
In conclusion, IGW25T120FKSA1 is a single IGBT that is suitable for a variety of applications, such as motor drives, inverters and general-purpose switching. Its high electric current rating, low on-state resistance and low drive power requirement make it an ideal choice for applications requiring higher current and voltage. Its working principle is based on the simple on/off action of its gate, which allows it to be used in both low-power and high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IGW25T120FKSA1 | Infineon Tec... | 2.88 $ | 1000 | IGBT 1200V 50A 190W TO247... |
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