IGW25N120H3FKSA1 Allicdata Electronics
Allicdata Part #:

IGW25N120H3FKSA1-ND

Manufacturer Part#:

IGW25N120H3FKSA1

Price: $ 3.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 50A 326W TO247-3
More Detail: IGBT Trench Field Stop 1200V 50A 326W Through Hole...
DataSheet: IGW25N120H3FKSA1 datasheetIGW25N120H3FKSA1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.47760
10 +: $ 3.12354
100 +: $ 2.55919
500 +: $ 2.17862
1000 +: $ 1.83738
Stock 1000Can Ship Immediately
$ 3.82
Specifications
Power - Max: 326W
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 25A, 23 Ohm, 15V
Td (on/off) @ 25°C: 27ns/277ns
Gate Charge: 115nC
Input Type: Standard
Switching Energy: 2.65mJ
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGW25N120H3FKSA1 transistor is a type of Insulated Gate Bipolar Transistor (IGBT) and belongs to the Single IGBTs category. IGBTs exhibit low conduction loss, fast switching speed and simple drive characteristics, which make them ideal for use in converters, motor control and other industrial and consumer applications. This device has a maximum collector-emitter voltage of 1.2kV and the maximum collector current rating is 25A at 25°C. It also has a maximum power rating of 75W at 25°C.

This IGBT can be used in a wide range of applications, from high-frequency inverters to power supply circuits. Its broad applications and features have made it one of the most popular IGBTs in the market. Its low conduction and switching loss, coupled with its ruggedness, makes it an ideal choice for many applications in motor control, commercial and consumer electronics. Additionally, it is also suitable for use in renewable energy applications such as wind turbines, solar panels and electric vehicles as well as in industrial control systems.

The working principle of IGW25N120H3FKSA1 is based on the hybrid semiconductor technology. In this device, an insulated gate bipolar transistor (IGBT) is combined with a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Basically, this arrangement allows the device to operate in both uni-polar and bi-polar modes. This offers superior performance over traditional discrete transistors.

The device also has a high avalanche energy rating and high dV/dt rating. The avalanche energy is basically the energy required to inject current into the device and the dV/dt rating is the rate at which the voltage of the device can change without causing damage. Both these parameters are key for applications such as motor control.

In summary, the IGW25N120H3FKSA1 transistor is an industry-standard IGBT that can be used in a variety of applications such as motor control, power supplies, renewable energy, and industrial control systems. Its combination of low conduction loss, fast switching speed and ruggedness makes it an ideal choice for such applications. Additionally, it also has a high avalanche energy rating and a high dV/dt rating, making it suitable for motor control.

The specific data is subject to PDF, and the above content is for reference

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