IHW40N135R3FKSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	1350V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 40A
Power - Max:	429W
Switching Energy:	2.5mJ (off)
Input Type:	Standard
Gate Charge:	365nC
Td (on/off) @ 25°C:	-/343ns
Test Condition:	600V, 40A, 7.5 Ohm, 15V
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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The IHW40N135R3FKSA1 is part of a range of insulated gate bipolar transistors (IGBTs). IGBTs are used in power management and power conversion applications, due to their very fast switching speeds and low on-state resistance. The IHW40N135R3FKSA1 is a single IGBT with a nominal breakdown voltage of 450V and an on-state current rating of 40A.The IGBT is a type of power semiconductor that combines the characteristics of both a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). It combines the advantages of both the BJT and the MOSFET, by allowing electrons to flow in both directions and allowing good switching characteristics, making it suitable for high current and high power applications.The IGBT consists of two main components: the emitter and the collector. The emitter is a thin intrinsic layer of semiconductor material which is connected to the collector terminal, while the collector is a conductive semiconductor material of a higher doping concentration. When the base, which is a control voltage, between the emitter and the collector is zero, no electrons can flow, causing the transistor to be in an off-state. When the control voltage is increased, electrons are injected into the intrinsic layer and the transistor is put in an on-state.The IGBT can be used in a variety of applications, from motor control and power supplies to solar energy conversion and automotive power electronics. One of the most common applications for IGBTs is in motor control, where the IGBT is used for the commutation of the windings in order to create a smooth motion of the motor. It is also used in solar inverter and uninterruptible power supplies.Due to its simplicity, power efficiency and fast switching speeds, the IHW40N135R3FKSA1 is used in a variety of power conversion applications. It is used in power driver applications, where it is used to control the voltage and current in an electrical circuit. The fast switching capability also makes it suitable for a variety of high speed switching applications.The IHW40N135R3FKSA1 is also used in low-voltage power electronics applications, where it can be used to quickly switch large currents in high power systems. It is also used in high-frequency switchmode power supplies and in power factor correction circuits.The IHW40N135R3FKSA1 is also used in low-voltage lighting applications, where its fast switching ability is used to control the light output. The low operating voltage of the IHW40N135R3FKSA1 also makes it ideal for use in LED lighting applications, where it can provide accurate and efficient control of the LED’s current and voltage.In addition to its low switching loss and low on resistance, the IHW40N135R3FKSA1 also has a number of safety features. It is equipped with an over-voltage protection circuit, short-circuit protection, over-temperature protection and over-current protection, making it suitable for use in a variety of power conversion applications.In conclusion, the IHW40N135R3FKSA1 is a single IGBT with a nominal breakdown voltage of 450V and an on-state current rating of 40A. It combines the advantages of both the BJT and the MOSFET, allowing for low on-state resistance and fast switching speeds. It can be used in a variety of power conversion applications, from motor control and power supplies to solar energy conversion and automotive power electronics. It is equipped with safety features to protect against over-voltage, short-circuiting, over-temperature and over-current, making it suitable for use in a wide range of power conversion applications.

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